power conversion device GOODWORK AO4828-GK trenched N-channel MOSFET with low gate charge and RDSon
Key Attributes
Model Number:
AO4828-GK
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
6A
RDS(on):
28mΩ@10V,5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
49.4pF@25V
Number:
2 N-Channel
Input Capacitance(Ciss):
1.148nF@25V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
20.3nC@10V
Mfr. Part #:
AO4828-GK
Package:
SOP-8
Product Description
Product Overview
The AO4828 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and gate charge characteristics, contributing to efficient power conversion. This product meets RoHS and Green Product standards, with Green Device availability.
Product Attributes
- Certifications: RoHS, Green Product, Green Device Available
Technical Specifications
| Symbol | Parameter | Min. | Typ. | Max. | Units | Test Condition |
| V(BR)DSS | Drain-Source Breakdown Voltage | 60 | - | - | V | VGS=0V, ID=250A |
| IDSS | Zero Gate Voltage Drain Current | - | - | 1.0 | A | VDS=60V, VGS = 0V |
| IGSS | Gate to Body Leakage Current | - | - | 100 | nA | VDS=0V, VGS = 20V |
| VGS(th) | Gate Threshold Voltage | 1.0 | 1.6 | 2.5 | V | VDS=VGS, ID=250A |
| RDS(on) | Static Drain-Source on-Resistance | - | 28 | 40 | m | VGS=10V, ID=5A |
| RDS(on) | Static Drain-Source on-Resistance | - | 36 | 50 | m | VGS=4.5V, ID=3A |
| Ciss | Input Capacitance | - | 1148 | - | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Coss | Output Capacitance | - | 58.5 | - | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Crss | Reverse Transfer Capacitance | - | 49.4 | - | pF | VDS=25V, VGS=0V, f=1.0MHz |
| Qg | Total Gate Charge | - | 20.3 | - | nC | VDS=30V, ID=2.5A, VGS=10V |
| Qgs | Gate-Source Charge | - | 3.7 | - | nC | VDS=30V, ID=2.5A, VGS=10V |
| Qgd | Gate-Drain(Miller) Charge | - | 5.3 | - | nC | VDS=30V, ID=2.5A, VGS=10V |
| td(on) | Turn-on Delay Time | - | 7.6 | - | ns | VDS=30V, ID=5A, RG=1.8, VGS=10V |
| tr | Turn-on Rise Time | - | 20 | - | ns | VDS=30V, ID=5A, RG=1.8, VGS=10V |
| td(off) | Turn-off Delay Time | - | 15 | - | ns | VDS=30V, ID=5A, RG=1.8, VGS=10V |
| tf | Turn-off Fall Time | - | 24 | - | ns | VDS=30V, ID=5A, RG=1.8, VGS=10V |
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | 5 | A | - |
| ISM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | 20 | A | - |
| VSD | Drain to Source Diode Forward Voltage | - | - | 1.2 | V | VGS=0V, IS=5A |
| trr | Body Diode Reverse Recovery Time | - | 29 | - | ns | IF=5A, dI/dt=100A/s |
| Qrr | Body Diode Reverse Recovery Charge | - | 43 | - | nC | IF=5A, dI/dt=100A/s |
2504161540_GOODWORK-AO4828-GK_C47435900.pdf
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