MOSFET designed for load switch applications GOODWORK SI2308 offers low resistance and robust operation
Key Attributes
Model Number:
SI2308
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
29pF
Input Capacitance(Ciss):
350pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
SI2308
Package:
SOT-23
Product Description
Product Overview
The SI2308 is a high cell density trenched N-channel MOSFET designed for small power switching and load switch applications. It offers excellent RDSON and efficiency, meeting RoHS and Green Product requirements with full function reliability.
Product Attributes
- Brand: DEMACHEL
- Certifications: RoHS, Green Device Available
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Units |
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Continuous Drain Current | ID | TA= 25 | 3 | A | ||
| Continuous Drain Current | ID | TA= 100 | 2 | A | ||
| Pulsed Drain Current | IDM | note1 | 12 | A | ||
| Power Dissipation | PD | TA= 25 | 1.5 | W | ||
| Thermal Resistance, Junction to Ambient | RJA | 83 | /W | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | +150 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250µA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1.0 | µA | ||
| Gate to Body Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250µA | 1.0 | 1.4 | 2.0 | V |
| Static Drain-Source on-Resistance | RDS(on) | VGS=10V, ID=3A, note2 | 75 | 85 | mΩ | |
| Static Drain-Source on-Resistance | RDS(on) | VGS=4.5V, ID=2A, note2 | 90 | 105 | mΩ | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1.0MHz | 350 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1.0MHz | 29 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1.0MHz | 23 | pF | ||
| Total Gate Charge | Qg | VDS=30V, ID=3A, VGS=10V | 9 | nC | ||
| Gate-Source Charge | Qgs | VDS=30V, ID=3A, VGS=10V | 1.5 | nC | ||
| Gate-Drain(Miller) Charge | Qgd | VDS=30V, ID=3A, VGS=10V | 2 | nC | ||
| Turn-on Delay Time | td(on) | VDD=30V,ID=2A, RGEN=3Ω, VGS=10V | 5 | ns | ||
| Turn-on Rise Time | tr | VDD=30V,ID=2A, RGEN=3Ω, VGS=10V | 7 | ns | ||
| Turn-off Delay Time | td(off) | VDD=30V,ID=2A, RGEN=3Ω, VGS=10V | 37 | ns | ||
| Turn-off Fall Time | tf | VDD=30V,ID=2A, RGEN=3Ω, VGS=10V | 22 | ns | ||
| Maximum Continuous Drain to Source Diode Forward Current | IS | 3 | A | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 12 | A | |||
| Drain to Source Diode Forward Voltage | VSD | VGS = 0V, IS=3A | 1.2 | V |
2411041202_GOODWORK-SI2308_C42186047.pdf
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