P Channel MOSFET Guangdong Hottech IRLML6401 Low Voltage Device with Low On Resistance in SOT 23 Package
Key Attributes
Model Number:
IRLML6401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
RDS(on):
52mΩ@10V,4A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 P-Channel
Input Capacitance(Ciss):
645pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
-
Mfr. Part #:
IRLML6401
Package:
SOT-23
Product Description
Product Overview
This P-Channel Low Voltage MOSFET is designed for PWM and load switch applications. It features low on-resistance and is available in a surface-mount SOT-23 package.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
- Origin: China
- Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Email: hkt@heketai.com
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Drain-Source Breakdown Voltage | V(BR)DSS* | -30 | V | VGS=0V, ID=-250A |
| Zero Gate Voltage Drain Current | IDSS* | -1 | uA | VDS=-24V, VGS=0V |
| Gate-Body Leakage Current | IGSS* | 100 | nA | VDS=0V, VGS=16V |
| Gate-Threshold Voltage | VGS(th)* | -0.6 ~ -1.2 | V | VDS=VGS, ID=-250A |
| On State Drain Current | ID(ON)* | -27 | A | VGS=-10V, VDS=-5V |
| Drain-Source On-Resistance | RDS(ON)* | 44 ~ 52 | m | VGS=-10V, ID=-4.0A |
| Drain-Source On-Resistance | RDS(ON)* | 53 ~ 75 | m | VGS=-4.5V, ID=-3.0A |
| Forward Transconductance | gFS | 10 | S | VDS=-5V, ID=-4.0A |
| Gate Resistance | Rg | 4 ~ 12 | VDS=0V, VGS=0V, f=1MHz | |
| Input Capacitance | Ciss | 645 | pF | VDS=-15V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | 80 | pF | VDS=-15V, VGS=0V, f=1MHz |
| Reverse Transfer Capacitance | Crss | 55 | pF | VDS=-15V, VGS=0V, f=1MHz |
| Turn-on Delay Time | td(on) | 6.5 | nS | VGS=-10V,VDS=-15V, RGEN=3,RL=3.75 |
| Turn-on Rise Time | tr | 3.5 | nS | VGS=-10V,VDS=-15V, RGEN=3,RL=3.75 |
| Turn-off Delay Time | td(off) | 41 | nS | VGS=-10V,VDS=-15V, RGEN=3,RL=3.75 |
| Turn-off Fall Time | tf | 9 | nS | VGS=-10V,VDS=-15V, RGEN=3,RL=3.75 |
| Total Gate Charge | Qg | 7 ~ 14 | nC | VDS=-15V, ID=-4A |
| Gate-Source Charge | Qgs | 1.5 | nC | VDS=-15V, VGS=-4.5V, ID=-4A |
| Gate-Drain Charge | Qgd | 2.5 | nC | VDS=-15V, VGS=-10V, ID=-4A |
| Diode Forward Voltage | VSD | -0.82 ~ -1.4 | V | IS=-1A, VGS=0V |
| Diode Forward Current | IS | -2 | A | TC = 25C |
| Body Diode Reverse Recovery Time | trr | 11 | nS | IF=-4A,dI/dt=100A/s |
| Body Diode Reverse Recovery Charge | Qrr | 3.5 | nC | IF=-4A,dI/dt=100A/s |
| Continuous Drain Current | ID | -4 | A | TA=25C |
| Continuous Drain Current | ID | -3.2 | A | TA=70C |
| Pulsed Drain Current | IDM | -27 | A | -- |
| Power Dissipation | PD | 1.4 | W | TA=25C |
| Power Dissipation | PD | 0.9 | W | TA=70C |
| Thermal Resistance Junction to Ambient | RJA | 125 | C/W | -- |
| Junction Temperature | TJ | 150 | C | -- |
| Storage Temperature | TSTG | -55~+150 | C | -- |
| Drain-Source Voltage | VDS | -30 | V | -- |
| Gate-Source Voltage | VGS | 16 | V | -- |
2409302231_Guangdong-Hottech-IRLML6401_C5190144.pdf
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