Surface Mount N Channel MOSFET Guangdong Hottech IRLML6244 with Low On Resistance and Fast Switching
Key Attributes
Model Number:
IRLML6244
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.3A
RDS(on):
21mΩ@4.5V,6.3A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.1V
Reverse Transfer Capacitance (Crss@Vds):
98pF@16V
Number:
1 N-channel
Input Capacitance(Ciss):
700pF@16V
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
8.9nC@4.5V
Mfr. Part #:
IRLML6244
Package:
SOT-23
Product Description
IRLML6244 MOSFET (N-CHANNEL)
The IRLML6244 is an N-channel MOSFET designed for surface mount applications. It features low on-resistance, fast switching speeds, and ultra-low on-resistance, making it suitable for various electronic circuits requiring efficient power management.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Part Number: IRLML6244
- Type: MOSFET (N-CHANNEL)
- Package: SOT-23
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Weight: 0.008 grams (approximate)
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| Drain-source voltage | VDS | 20 | V | |
| Gate-source voltage | VGS | ±12 | V | |
| Continuous drain current | ID | 6.3 | A | TA=25°C |
| Continuous drain current | ID | 5.1 | A | TA=70°C |
| Pulsed drain current | IDM | 32 | A | (Note 1) |
| Power dissipation | PD | 1.3 | W | TA=25°C |
| Power dissipation | PD | 0.8 | W | TA=70°C |
| Linear Derating Factor | 0.01 | W/°C | ||
| Thermal resistance from Junction to ambient | RθJA* | 100 | °C/W | *Surface mounted on 1 in square Cu board |
| Storage and Junction temperature | TJ,TSTG | -55 ~+150 | °C | |
| Drain-Source breakdown voltage | V(BR)DSS | 20 | V | VGS=0V, ID=250μA |
| Zero gate voltage drain current | IDSS | 1 | μA | VDS=16V, VGS=0V |
| Zero gate voltage drain current | IDSS | 150 | μA | VDS=16V, VGS=0V,Tj=125°C |
| Gate-body leakage current | IGSS | ±100 | nA | VDS=0V, VGS=±12V |
| Gate-threshold voltage (note 1) | VGS(th) | 0.5 | V | VDS=VGS, ID=10μA |
| Gate-threshold voltage (note 1) | VGS(th) | 0.9 | V | VDS=VGS, ID=10μA |
| Gate-threshold voltage (note 1) | VGS(th) | 1.1 | V | VDS=VGS, ID=10μA |
| Drain-source on-resistance(note 1) | RDS(ON) | 16 | mΩ | VGS=4.5V, ID=6.3A |
| Drain-source on-resistance(note 1) | RDS(ON) | 21 | mΩ | VGS=4.5V, ID=6.3A |
| Drain-source on-resistance(note 1) | RDS(ON) | 22 | mΩ | VGS=2.5V, ID=5.1A |
| Drain-source on-resistance(note 1) | RDS(ON) | 27 | mΩ | VGS=2.5V, ID=5.1A |
| Internal Gate Resistance | RG | 1.7 | Ω | |
| Forward transconductance(note 1) | gFS | 17 | S | VDS=10V, ID=6.3A |
| Input capacitance | Ciss | 700 | pF | VDS=16V, VGS=0V, f=1MHz |
| Output capacitance | Coss | 140 | pF | VDS=16V, VGS=0V, f=1MHz |
| Reverse transfer capacitance | Crss | 98 | pF | VDS=16V, VGS=0V, f=1MHz |
| Turn-on delay time | td(on) | 4.9 | nS | VDD=10V,ID=1A, RG=6.8Ω,VGS=4.5V |
| Turn-on rise time | tr | 7.5 | nS | VDD=10V,ID=1A, RG=6.8Ω,VGS=4.5V |
| Turn-off delay time | td(off) | 19 | nS | VDD=10V,ID=1A, RG=6.8Ω,VGS=4.5V |
| Turn-off fall time | tf | 12 | nS | VDD=10V,ID=1A, RG=6.8Ω,VGS=4.5V |
| Total gate charge | Qg | 8.9 | nC | VDS=10V,VGS=4.5V,ID=6.3A |
| Gate-source charge | Qgs | 0.68 | nC | VDS=10V,VGS=4.5V,ID=6.3A |
| Gate-drain charge | Qgd | 4.4 | nC | VDS=10V,VGS=4.5V,ID=6.3A |
| Diode forward current(Body Diode) | IS | 1.3 | A | |
| Pulsed Source Current(Body Diode) | ISM | 32 | A | |
| Diode forward voltage (note 1) | VSD | 1.2 | V | IS=6.3A, VGS=0V,Tj=25°C |
| Reverse Recovery Time | trr | 12 | nS | TJ=25°C,VR=15V,IF=1.3A, di/dt=100A/μs |
| Reverse Recovery Time | trr | 18 | nS | TJ=25°C,VR=15V,IF=1.3A, di/dt=100A/μs |
| Reverse Recovery Charge | Qrr | 5.1 | nC | TJ=25°C,VR=15V,IF=1.3A, di/dt=100A/μs |
| Reverse Recovery Charge | Qrr | 7.7 | nC | TJ=25°C,VR=15V,IF=1.3A, di/dt=100A/μs |
Note 1: Pulse test; Pulse width ≤400μs, Duty cycle ≤2%.
2410121947_Guangdong-Hottech-IRLML6244_C5364311.pdf
Related Products
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
