P channel MOSFET Guangdong Hottech AO4435 with ultra low gate charge and UL 94V 0 flammability rating
Key Attributes
Model Number:
AO4435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8A
RDS(on):
27mΩ@10V,10A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.3V
Reverse Transfer Capacitance (Crss@Vds):
155pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
3.1W
Input Capacitance(Ciss):
1.4nF@15V
Gate Charge(Qg):
24nC@4.5V
Mfr. Part #:
AO4435
Package:
SOP-8
Product Description
Product Overview
The AO4435 is a low voltage P-channel MOSFET designed for load switch and PWM applications. It features ultra-low on-resistance and ultra-low gate charge, offering high efficiency and performance.
Product Attributes
- Brand: AOS (implied by AOS logo and text)
- Product Type: Low Voltage MOSFET (P-Channel)
- Package: SOP-8
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Origin: SHENZHEN HOTTECH ELECTRONICS CO.,LTD (implied by copyright and email)
- Application Note: Designed and qualified for the consumer market. Applications or uses as critical components in life support devices or systems are not authorized.
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Drain-Source breakdown voltage | V(BR)DSS* | -30 | V | VGS=0V, ID=-250A | ||
| Zero gate voltage drain current | IDSS* | -1 | A | VDS=-30V, VGS=0V | ||
| Gate-body leakage current | IGSS* | 100 | nA | VDS=0V, VGS=25V | ||
| Gate-threshold voltage | VGS(th)* | -1.7 | -2.3 | -3 | V | VDS=VGS, ID=-250A |
| On-State Drain Current | ID(ON)* | -80 | A | VDS=-5V, VGS=-10V | ||
| Drain-source on-resistance | RDS(ON)* | 15 | 18 | m | VGS=-10V, ID=-10A | |
| Drain-source on-resistance | RDS(ON)* | 22 | 27 | m | VGS=-10V, ID=-10A, TJ=125C | |
| Drain-source on-resistance | RDS(ON)* | 27 | 36 | m | VGS=-5V, ID=-5A | |
| Forward transconductance | gFS | 22 | S | VDS=-5V, ID=-10A | ||
| Diode forward voltage | VSD | -0.74 | -1 | V | IS=-1A, VGS=0V | |
| Diode forward current | IS | -3.5 | A | |||
| Input capacitance | Ciss | 1130 | 1400 | pF | VDS=-15V, VGS=0V, f=1MHz | |
| Output capacitance | Coss | 240 | pF | VDS=-15V, VGS=0V, f=1MHz | ||
| Reverse transfer capacitance | Crss | 155 | pF | VDS=-15V, VGS=0V, f=1MHz | ||
| Gate resistance | Rg | 5.8 | 8 | VDS=0V, VGS=0V, f=1MHz | ||
| Total gate charge | Qg | 9.5 | nC | VGS=-4.5V,VDS=-15V,ID=-10A | ||
| Total gate charge | Qg | 18 | 24 | nC | VGS=-10V,VDS=-15V,ID=-10A | |
| Gate-source charge | Qgs | 5.5 | nC | |||
| Gate-drain charge | Qgd | 3.3 | nC | |||
| Turn-on delay time | td(on) | 8.7 | nS | VGS=-10V, VDS=-15V, RGEN=3,RL=1.67 | ||
| Turn-on rise time | tr | 8.5 | nS | VGS=-10V, VDS=-15V, RGEN=3,RL=1.67 | ||
| Turn-off delay time | td(off) | 18 | nS | VGS=-10V, VDS=-15V, RGEN=3,RL=1.67 | ||
| Turn-off fall time | tf | 7 | nS | VGS=-10V, VDS=-15V, RGEN=3,RL=1.67 | ||
| Body Diode Reverse Recovery Time | trr | 25 | 30 | nS | IF=-10A, dI/dt=100A/ s | |
| Body Diode Reverse Recovery Charge | Qrr | 12 | nC | IF=-10A, dI/dt=100A/ s | ||
| Drain-source voltage | VDS | -30 | V | 10Sec Steady state | ||
| Gate-source voltage | VGS | 25 | V | 10Sec Steady state | ||
| Continuous drain current | ID | -10 | -8 | A | TA = 25C | |
| Continuous drain current | ID | -8 | -6 | A | TA = 70C | |
| Pulsed drain current | IDM | -80 | A | |||
| Power dissipation | PD | 3.1 | 1.7 | W | TA = 25C | |
| Power dissipation | PD | 2.0 | 1.1 | W | TA = 70C | |
| Thermal resistance from Junction to ambient | RJA | 75 | C/W | |||
| Thermal resistance from Junction to Lead | RJL | 24 | C/W | |||
| Junction temperature | TJ | 150 | C | |||
| Storage temperature | TSTG | -55 | +150 | C |
2409302200_Guangdong-Hottech-AO4435_C5364282.pdf
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