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quality Power MOSFET Guangdong Hottech HKTD50N06 N-Channel Device with 50 Amp Continuous Drain Current Rating factory
quality Power MOSFET Guangdong Hottech HKTD50N06 N-Channel Device with 50 Amp Continuous Drain Current Rating factory

Power MOSFET Guangdong Hottech HKTD50N06 N-Channel Device with 50 Amp Continuous Drain Current Rating

Key Attributes
Model Number: HKTD50N06
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
RDS(on):
23mΩ@4.5V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
90pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.25nF
Pd - Power Dissipation:
45W
Mfr. Part #:
HKTD50N06
Package:
TO-252
Product Description

N-CHANNEL Power MOSFET

This N-CHANNEL Power MOSFET features a high-density cell design for ultra-low on-resistance and a fully characterized avalanche voltage and current capability. It is designed for efficient power management applications.

Product Attributes

  • Brand: HOTTECH
  • Origin: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
  • Case Material: Molded Plastic
  • Flammability: UL 94V-0
  • Marking: D50N06

Technical Specifications

Parameter Symbol Condition Min Typ Max Unit
FEATURES
Drain-Source Voltage VDS 60 V
Continuous Drain Current ID VGS=10V 50 A
Drain-Source On-Resistance RDS(ON) VGS=10V 17 m
Drain-Source On-Resistance RDS(ON) VGS=4.5V 23 m
MECHANICAL DATA
Case TO-252
Weight 0.33 grams(approximate)
MAXIMUM RATINGS (TA=25C unless otherwise noted)
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID VGS=10V 50 A
Pulsed Drain Current IDM (Note 1) 200 A
Power Dissipation PD 45 W
Thermal Resistance Junction-to-Ambient RJA 62 C/W
Operating Junction and Storage Temperature TJ,TSTG -55 +150 C
Single Pulsed Avalanche Energy EAS (note 1) 12 mJ
Lead Temperature for Soldering Purposes TL (1/8 from case for 10s) 260 C
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
Drain-Source Breakdown Voltage V(BR)DS VGS=0V,ID=250A 60 V
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 uA
Gate-Body Leakage Current IGSS VDS=0V, VGS=20V 100 nA
Gate-Threshold Voltage VGS(th) VDS=VGS, ID=250A 1.2 1.8 2.5 V
Drain-Source On-Resistance RDS(ON) VGS=10V, ID=20A 13.5 17 m
Drain-Source On-Resistance RDS(ON) VGS=4.5V,ID= 20A 18 23 m
Forward Transconductance gFS VDS=5V,ID=20A 10 S
Input Capacitance Ciss VGS=0V VDS=25V f=1.0MHz 1250 pF
Output Capacitance Coss VGS=0V VDS=25V f=1.0MHz 445 pF
Reverse Transfer Capacitance Crss VGS=0V VDS=25V f=1.0MHz 90 pF
Turn-on Delay Time td(on) VDD=30V ID=50A RG=25 VGS=10V 20 ns
Turn-on Rise Time tr VDD=30V ID=50A RG=25 VGS=10V 380 ns
Turn-off Delay Time td(off) VDD=30V ID=50A RG=25 VGS=10V 80 ns
Turn-off Fall Time tf VDD=30V ID=50A RG=25 VGS=10V 145 ns
Total Gate Charge Qg VDS=48V,VGS=5V ID=50A 25 nC
Gate-Source Charge Qgs VDS=48V,VGS=5V ID=50A 6 nC
Gate-Drain Charge Qgd VDS=48V,VGS=5V ID=50A 14.5 nC
Drain-Source Diode Characteristics
Diode Forward Voltage VSD IS=50A,VGS=0V 1.5 V
Max. Forward Current IS 50 A
Pulsed Drain-Source Diode Forward Current ISM 200 A

2410121918_Guangdong-Hottech-HKTD50N06_C5364292.pdf

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