High power gain low noise NPN transistor GUOXIN JIAPIN SEMICONDUCTOR FCS520 ultra small SOT 323 package for RF applications
Key Attributes
Model Number:
FCS520
Product Custom Attributes
Emitter-Base Voltage(Vebo):
2V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
8GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
12V
Mfr. Part #:
FCS520
Package:
SOT-323
Product Description
Product Overview
The FCS520 is an ultra-high frequency, low-noise NPN silicon epitaxial bipolar transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It offers high power gain and low noise characteristics. Its ultra-small SOT-323 package makes it ideal for high-density surface mount applications, primarily used in VHF and UHF low-noise amplifiers.
Product Attributes
- Brand: (Guo Xin Jia Pin SEMICONDUTOR)
- Origin: China (implied by manufacturer name and language)
- Material: Silicon Epitaxial Bipolar
- Package: SOT-323
Technical Specifications
| Parameter | Symbol | Minimum | Typical | Maximum | Unit | Test Conditions |
| Collector-Base Breakdown Voltage | VCBO | 20 | V | IC=1.0A | ||
| Collector-Base Leakage Current | ICBO | 0.1 | A | VCB=10V | ||
| Emitter-Base Leakage Current | IEBO | 0.1 | A | VEB=1V | ||
| DC Current Gain | hFE | 90 | 150 | 250 | VCE=6V, IC=20mA | |
| Transition Frequency | fT | 8 | GHz | VCE=6V, IC=20mA, f=1GHz | ||
| Output Feedback Capacitance | Cre | 0.4 | 0.7 | pF | VCB=6V, IE=0mA, f=1MHz | |
| Power Gain | | S21e | | 12.5 | dB | VCE=6V, IC=20mA, f=1GHz | ||
| Noise Figure | NF | 1.5 | 2.0 | dB | VCE=6V, IC=5mA, f=1GHz | |
| Collector Current (Absolute Maximum Rating) | IC | 100 | mA | TA=25 | ||
| Power Dissipation (Absolute Maximum Rating) | PC | 150 | mW | TA=25 | ||
| Junction Temperature (Absolute Maximum Rating) | Tj | 150 | ||||
| Storage Temperature (Absolute Maximum Rating) | Tstg | -65 | +150 |
2410121235_GUOXIN-JIAPIN-SEMICONDUCTOR-FCS520_C2992552.pdf
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