Plastic Encapsulated Transistor Guangdong Hottech BC856C SOT23 Package Ideal for Amplifier Circuits
Key Attributes
Model Number:
BC856C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Mfr. Part #:
BC856C
Package:
SOT-23
Product Description
Product Overview
Plastic-encapsulated transistors ideally suited for automatic insertion, designed for switching and AF amplifier applications. Available in various models with distinct marking codes.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
- Material: Plastic-Encapsulate
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | BC856 | BC857 | BC858 | Unit | Conditions |
| Collector-Base Voltage | VCBO | -80 | -50 | -30 | V | TA=25 unless otherwise noted |
| Collector-Emitter Voltage | VCEO | -65 | -45 | -30 | V | TA=25 unless otherwise noted |
| Emitter-Base Voltage | VEBO | -5 | V | TA=25 unless otherwise noted | ||
| Collector Current - Continuous | IC | 0.1 | A | TA=25 unless otherwise noted | ||
| Collector Power Dissipation | PC | 0.2 | W | TA=25 unless otherwise noted | ||
| Junction Temperature | TJ | 150 | C | TA=25 unless otherwise noted | ||
| Storage Temperature | Tstg | -55 to +150 | C | TA=25 unless otherwise noted | ||
| Collector-base breakdown voltage | VCBO | -80 | -50 | -30 | V | IC= -10A, IE=0 |
| Collector-emitter breakdown voltage | VCEO | -65 | -45 | -30 | V | IC= -10mA, IB=0 |
| Emitter-base breakdown voltage | VEBO | -5 | V | IE= -1A, IC=0 | ||
| Collector cut-off current | ICBO | -0.1 | -0.1 | -0.1 | A | VCB= -70 V (BC856), VCB= -45 V (BC857), VCB= -25 V (BC858), IE=0 |
| Collector cut-off current | ICEO | -0.1 | -0.1 | -0.1 | A | VCE= -60 V (BC856), VCE= -40 V (BC857), VCE= -25 V (BC858), IB=0 |
| Emitter cut-off current | IEBO | -0.1 | A | VEB= -5 V , IC=0 | ||
| DC current gain | hFE | 125-250 | 220-475 | 420-800 | VCE= -5V, IC= -2mA | |
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC=-100mA, IB= -5 mA | ||
| Base-emitter saturation voltage | VBE(sat) | -1.1 | V | IC= -100mA, IB= -5mA | ||
| Transition frequency | fT | 100 | MHz | VCE= -5 V, IC= -10mA, f=100MHz | ||
| Collector capacitance | Cob | 4.5 | pF | VCB=-10V, f=1MHz | ||
2410122025_Guangdong-Hottech-BC856C_C181145.pdf
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