Electronic switching semiconductor GOODWORK BSS84DW-GK with low gate threshold voltage and low input capacitance

Key Attributes
Model Number: BSS84DW-GK
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
RDS(on):
6Ω@5V,100mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@1mA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF@25V
Number:
1 P-Channel
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
45pF@25V
Pd - Power Dissipation:
300mW
Mfr. Part #:
BSS84DW-GK
Package:
SOT-363
Product Description

Product Overview

The BSS84DW is a semiconductor device designed for electronic applications. It features low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speed, making it suitable for various switching and amplification tasks.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

CharacteristicSymbolMinTypMaxUnitTest Condition
MAXIMUM RATINGS
Drain-Source VoltageVDSS-50V
Drain-Gate Voltage (Note 1)VDGR-50V
Gate-Source Voltage ContinuousVGSS±20V
Drain Current Continuous (Note 2)ID-130mA
Total Power Dissipation (Note 2)Pd300mW@ TA = 25°C
Thermal Resistance, Junction to AmbientRqJA417°C/W
Operating and Storage Temperature RangeTj, TSTG-55+150°C
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown VoltageBVDSS-50-75VVGS = 0V, ID = -250mA
Zero Gate Voltage Drain CurrentIDSS-15µAVDS = -50V, VGS = 0V, TJ = 25°C
Zero Gate Voltage Drain CurrentIDSS-60µAVDS = -50V, VGS = 0V, TJ = 125°C
Gate-Body LeakageIGSS±10µAVGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold VoltageVGS(th)-0.8-1.6-2.0VVDS = VGS, ID = -1mA
Static Drain-Source On-ResistanceRDS (ON)610ΩVGS = -5V, ID = -0.100A
Forward TransconductancegFS0.05SVDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS
Input CapacitanceCiss45pFVDS = -25V, VGS = 0V, f = 1.0MHz
Output CapacitanceCoss25pFVDS = -25V, VGS = 0V, f = 1.0MHz
Reverse Transfer CapacitanceCrss12pFVDS = -25V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay TimetD(ON)10nsVDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V
Turn-Off Delay TimetD(OFF)18nsVDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V

2504101957_GOODWORK-BSS84DW-GK_C42456333.pdf

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