SOT23 Package Plastic Encapsulated MOSFET GOODWORK BSN20 Featuring High Saturation Current Capability
Key Attributes
Model Number:
BSN20
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
200mA
RDS(on):
3.5Ω@5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
3.3pF
Number:
1 N-channel
Output Capacitance(Coss):
5.6pF
Input Capacitance(Ciss):
21.8pF
Mfr. Part #:
BSN20
Package:
SOT-23
Product Description
Product Overview
The BSN20 is a Plastic-Encapsulated MOSFET in a SOT-23 package. It features a high density cell design for low RDS(ON), making it suitable as a voltage-controlled small signal switch. This device is rugged, reliable, and offers high saturation current capability.
Product Attributes
- Marking Type: BSN20
- Marking Code: SS
- Package Type: SOT-23
- Technology: Plastic-Encapsulate MOSFETS
- Feature: High density cell design for low RDS(ON)
- Feature: Voltage controlled small signal switch
- Feature: Rugged and reliable
- Feature: High saturation current capability
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| VDSS | Drain-Source Voltage | 50 | V | |||
| VGSS | Gate-Source Voltage | ±20 | V | |||
| ID | Drain Current-Continuous | 0.2 | A | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0 V, IDS = 250 μA | 50 | V | ||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0 V, IDS = 10 μA | 50 | V | ||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, IDS = 250 μA | 0.5 | 1.5 | V | |
| IDSS | Drain Leakage Current | VDS = 50 V, VGS = 0V | 500 | nA | ||
| IDSS | Drain Leakage Current | VDS = 25 V, VGS = 0V | 100 | μA | ||
| IGSS | Gate Leakage Current | VGS = ±20 V, VDS = 0 V | ± | μA | ||
| RDS(ON) | On-State Resistance | VGS = 5 V, IDS = 0.2 A | 3.5 | Ω | ||
| RDS(ON) | On-State Resistance | VGS = 2.75 V, IDS = 0.2 A | 10 | Ω | ||
| Ciss | Input Capacitance | VDS = 10 V, VGS = 0 V f = 1 MHz | 21.8 | 40 | pF | |
| Coss | Output Capacitance | 5.6 | 15 | pF | ||
| Crss | Reverse Transfer Capacitance | 3.3 | 10 | pF | ||
| VSD | Diode Forward Voltage | ISD = 0.2 A, VGS = 0 V | 2.5 | V |
2504101957_GOODWORK-BSN20_C42414248.pdf
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