Electrical ballast and switching power supply device Hangzhou Silan Microelectronics SVDZ24NT MOSFET
Key Attributes
Model Number:
SVDZ24NT
Product Custom Attributes
Drain To Source Voltage:
55V
Current - Continuous Drain(Id):
17A
Operating Temperature -:
-55℃~+175℃
RDS(on):
45mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12.5pF
Number:
1 N-channel
Output Capacitance(Coss):
130pF
Input Capacitance(Ciss):
400pF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
10.5nC@10V
Mfr. Part #:
SVDZ24NT
Package:
TO-220
Product Description
Product Overview
The SVDZ24NT is an N-channel enhancement mode power MOS field-effect transistor manufactured using Silan's new planar VDMOS process. It features an improved planar stripe cell and guard ring terminal designed to minimize on-state resistance, enhance switching performance, and provide superior withstand capability for high energy pulses in avalanche and commutation modes. This device is widely utilized in electrical ballast and low power switching power supply applications.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Pb free (SVDZ24NT), Halogen free (SVDZ24NDTR)
Technical Specifications
| Characteristics | Symbol | SVDZ24NT | SVDZ24ND | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 55 | 55 | V |
| Gate-Source Voltage | VGS | ±20 | ±20 | V |
| Drain Current (TC=25°C) | ID | 17 | 17 | A |
| Drain Current (TC=100°C) | ID | 12 | 12 | A |
| Drain Current Pulsed | IDM | 68 | 68 | A |
| Power Dissipation (TC=25°C) | PD | 45 | 45 | W |
| Derate above 25°C | 0.36 | 0.36 | W/°C | |
| Single Pulsed Avalanche Energy (Note 1) | EAS | 122 | 122 | mJ |
| Operation Junction Temperature Range | TJ | -55+175 | -55+175 | °C |
| Storage Temperature Range | Tstg | -55+175 | -55+175 | °C |
| THERMAL CHARACTERISTICS | ||||
| Thermal Resistance, Junction-to-Case | RθJC | 2.78 | 3.2 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | 62.5 | 62 | °C/W |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain -Source Breakdown Voltage | BVDSS | 55 | 55 | V |
| Drain-Source Leakage Current | IDSS | -- | 20 | µA |
| Gate-Source Leakage Current | IGSS | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | 2.0 -- 4.0 | 2.0 -- 4.0 | V |
| Static Drain-Source On State Resistance | RDS(on) | 45 (typ.) | 45 (typ.) | mΩ |
| Input Capacitance | Ciss | 400 (typ.) | 400 (typ.) | pF |
| Output Capacitance | Coss | 130 (typ.) | 130 (typ.) | pF |
| Reverse Transfer Capacitance | Crss | 12.5 (typ.) | 12.5 (typ.) | pF |
| Turn-on Delay Time | td(on) | 5.4 (typ.) | 5.4 (typ.) | ns |
| Turn-on Rise Time | tr | 32.5 (typ.) | 32.5 (typ.) | ns |
| Turn-off Delay Time | td(off) | 22.1 (typ.) | 22.1 (typ.) | ns |
| Turn-off Fall Time | tf | 12.4 (typ.) | 12.4 (typ.) | ns |
| Total Gate Charge | Qg | 10.5 (typ.) | 10.5 (typ.) | nC |
| Gate-Source Charge | Qgs | 2.5 (typ.) | 2.5 (typ.) | nC |
| Gate-Drain Charge | Qg d | 4.0 (typ.) | 4.0 (typ.) | nC |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Source Current | IS | 17 | 17 | A |
| Pulsed Source Current | ISM | 68 | 68 | A |
| Diode Forward Voltage | VSD | 1.3 (typ.) | 1.3 (typ.) | V |
| Reverse Recovery Time | Trr | 43 (typ.) | 43 (typ.) | ns |
| Reverse Recovery Charge | Qrr | 0.05 (typ.) | 0.05 (typ.) | µC |
2501091110_Hangzhou-Silan-Microelectronics-SVDZ24NT_C2761789.pdf
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