N Channel Power MOSFET GOODWORK DMG1012T with Improved dv dt Capability and Avalanche Energy Handling
Key Attributes
Model Number:
DMG1012T
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
800mA
RDS(on):
200mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
600mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Output Capacitance(Coss):
14.4pF
Input Capacitance(Ciss):
38.2pF
Pd - Power Dissipation:
312mW
Gate Charge(Qg):
1nC@4.5V
Mfr. Part #:
DMG1012T
Package:
SOT-523
Product Description
Product Overview
These N-Channel enhancement mode power field effect transistors utilize trench DMOS technology, optimized for minimal on-state resistance and superior switching performance. They are designed to withstand high energy pulses in avalanche and commutation modes, making them ideal for high efficiency fast switching applications. Key features include improved dv/dt capability, fast switching, and ESD protection up to 2KV. This device is available in a Green Device package.
Product Attributes
- Brand: Not Specified
- Origin: Not Specified
- Material: Not Specified
- Color: Not Specified
- Certifications: Not Specified
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Electrical Characteristics | BVDSS | Drain-Source Breakdown Voltage VGS=0V , ID=250uA | 20 | --- | --- | V |
| IDSS | Drain-Source Leakage Current VDS=20V , VGS=0V , TJ=25 | --- | --- | 1 | uA | |
| IGSS | Gate-Source Leakage Current VGS=10V , VDS=0V | --- | --- | 10 | uA | |
| RDS(ON) | Static Drain-Source On-Resistance VGS=4.5V , ID=0.5A | --- | 200 | 270 | m | |
| VGS(th) | Gate Threshold Voltage VGS=VDS , ID =250uA | 0.3 | 0.6 | 1.0 | V | |
| Dynamic and switching Characteristics | Qg | Total Gate Charge VDS=10V , VGS=4.5V , ID=0.5A | --- | 1 | --- | nC |
| Td(on) | Turn-On Delay Time VDD=10V , VGS=4.5V , RG=10 ID=0.5A | --- | 5 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 14 | --- | ns | |
| Ciss | Input Capacitance VDS=10V , VGS=0V , F=1MHz | --- | 38.2 | --- | pF | |
| Drain-Source Diode Characteristics | IS | Continuous Source Current VG=VD=0V , Force Current | --- | --- | 0.8 | A |
| VSD | Diode Forward Voltage VGS=0V , IS=0.2A , TJ=25 | --- | --- | 1.2 | V |
2504151801_GOODWORK-DMG1012T_C42385153.pdf
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