Power Transistor GOODWORK SI2323DS Utilizing Trench DMOS Technology in P Channel Enhancement Mode Design
Key Attributes
Model Number:
SI2323DS
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
39mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Pd - Power Dissipation:
1.56W
Input Capacitance(Ciss):
1.44nF@15V
Gate Charge(Qg):
16.1nC@4.5V
Mfr. Part #:
SI2323DS
Package:
SOT-23
Product Description
Product Overview
These P-Channel enhancement mode power field effect transistors utilize advanced trench DMOS technology. This technology is optimized to minimize on-state resistance, deliver superior switching performance, and provide robust withstand capability for high energy pulses in avalanche and commutation modes. These devices are well-suited for high efficiency, fast switching applications.
Product Attributes
- Brand: DEMACHEL
- Device Type: Power Field Effect Transistor
- Technology: Trench DMOS
- Mode: Enhancement Mode, P-Channel
- Certifications: Green Device Available
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit | Page |
| BVDSS Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -20 | V | 2 | ||
| RDS(ON) Static Drain-Source On-Resistance | VGS=-4.5V , ID=-4A | 29 | 39 | m | 2 | |
| RDS(ON) Static Drain-Source On-Resistance | VGS=-2.5V , ID=-3A | 40 | 50 | m | 2 | |
| VGS(th) Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.4 | -0.6 | -1 | V | 2 |
| ID Drain Current Continuous (TC=25) | -5.0 | A | 1 | |||
| ID Drain Current Continuous (TC=100) | -3.7 | A | 1 | |||
| IDM Drain Current Pulsed | -20 | A | 1 | |||
| PD Power Dissipation (TC=25) | 1.56 | W | 1 | |||
| RJA Thermal Resistance Junction to ambient | 80 | /W | 1 | |||
| Qg Total Gate Charge | VDS=-10V , VGS=-4.5V , ID=-4A | 16.1 | nC | 2 | ||
| Ciss Input Capacitance | VDS=-15V , VGS=0V , F=1MHz | 1440 | pF | 2 | ||
| Coss Output Capacitance | 155 | pF | 2 | |||
| Crss Reverse Transfer Capacitance | 115 | pF | 2 | |||
| IS Continuous Source Current | VG=VD=0V | -5.0 | A | 3 | ||
| ISM Pulsed Source Current | -10 | A | 3 | |||
| VSD Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | 3 |
2411081754_GOODWORK-SI2323DS_C42186045.pdf
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