power switching component GOODWORK 20N06 N channel Power Trench MOSFET with tested electrical limits
Key Attributes
Model Number:
20N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
26mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Reverse Transfer Capacitance (Crss@Vds):
47pF@30V
Number:
1 N-channel
Output Capacitance(Coss):
76pF
Pd - Power Dissipation:
37W
Input Capacitance(Ciss):
1.187nF@30V
Gate Charge(Qg):
24nC@30V
Mfr. Part #:
20N06
Package:
TO-252
Product Description
Product Overview
The 20N06 is an N-channel Power Trench MOSFET designed for efficient power management. It offers excellent RDS(ON) and low gate charge, making it suitable for load switching, PWM applications, and general power management tasks. This MOSFET is 100% UIS and Vds tested, and is Halogen-free and RoHS-compliant.
Product Attributes
- Certifications: Halogen-free; RoHS-compliant
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit | |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | 60 | V | ||||
| Gate-to-Source Voltage | ±20 | V | ||||
| Pulsed Drain Current | (1) | 20 | A | |||
| Continuous Drain Current | TC = 25°C | 60 | A | |||
| Continuous Drain Current | TC = 100°C | 42 | A | |||
| IDM | 79 | A | ||||
| EAS | Single Pulsed Avalanche Energy (2) | 24 | mJ | |||
| PD | Power Dissipation | 37 | W | |||
| TC = 25°C | 15 | W | ||||
| TC = 100°C | -55 to 150 | °C | ||||
| TJ, TSTG | Junction & Storage Temperature Range | °C | ||||
| Thermal Characteristics | ||||||
| RθJA | Thermal Resistance, Junction to Ambient(3) | 42 | °C/W | |||
| RθJC | Thermal Resistance, Junction to Case | 3.4 | °C/W | |||
| Off Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | 60 | - | - | V | |
| IDSS | Zero Gate Voltage Drain Current | VDS = 60V, VGS = 0V | - | - | 1.0 | mA |
| IGSS | Gate-Body Leakage Current | VDS = 0V, VGS = ±20V | - | - | ±100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250mA | 1.1 | 1.6 | 2.5 | V |
| Rds(ON) | Static Drain-Source ON-Resistance(4) | VGS = 10V, ID = 10A | - | 26 | 33 | mΩ |
| Rds(ON) | Static Drain-Source ON-Resistance(4) | VGS = 4.5V, ID = 5A | - | 32 | 45 | mΩ |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS = 0V, VDS = 30V, f = 1MHz | - | 848 | 1187 | pF |
| Coss | Output Capacitance | VGS = 0V, VDS = 30V, f = 1MHz | - | 40 | 56 | pF |
| Crss | Reverse Transfer Capacitance | VGS = 0V, VDS = 30V, f = 1MHz | - | 34 | 47 | pF |
| Qg | Total Gate Charge | VGS = 0 to 10V | - | 17 | 24 | nC |
| Qgs | Gate Source Charge | VDS = 30V, ID = 10A | - | - | 4.5 | nC |
| Qgd | Gate Drain("Miller") Charge | VDS = 30V, ID = 10A | - | - | 4.5 | nC |
| td(on) | Turn-On Delay Time | VGS = 10V, VDD = 30V, ID = 10A, RGEN = 3Ω | - | 6.7 | - | ns |
| tr | Turn-On Rise Time | VGS = 10V, VDD = 30V, ID = 10A, RGEN = 3Ω | - | 15 | - | ns |
| td(off) | Turn-Off Delay Time | VGS = 10V, VDD = 30V, ID = 10A, RGEN = 3Ω | - | 24 | - | ns |
| tf | Turn-Off Fall Time | VGS = 10V, VDD = 30V, ID = 10A, RGEN = 3Ω | - | 2.7 | - | ns |
| Body Diode Characteristics | ||||||
| IS | Maximum Continuous Body Diode Forward Current | - | 20 | A | ||
| ISM | Maximum Pulsed Body Diode Forward Current | - | 79 | A | ||
| VSD | Body Diode Forward Voltage | VGS = 0V, IS = 10A | - | 1.2 | - | V |
| trr | Body Diode Reverse Recovery Time | IF = 10A, di/dt = 100A/us | 13 | 19 | 25 | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 10A, di/dt = 100A/us | - | 19 | - | nC |
2504251720_GOODWORK-20N06_C48580719.pdf
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