N Channel Power MOSFET Hangzhou Silan Microelectronics SVF2N60M 600V 2A for Switching in Motor Drivers
Product Overview
The SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-cellTM structure DMOS technology. It features an improved planar stripe cell and guard ring terminal designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. This device is widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan
- Origin: Hangzhou Silan Microelectronics Co., Ltd
- Material: Pb free
Technical Specifications
| Part No. | Package Type | Drain-Source Voltage (VDS) | Gate-Source Voltage (VGS) | Drain Current (ID) | Power Dissipation (PD) (TC=25C) | RDS(on)(typ.)@VGS=10V | BVDSS | IDSS | IGSS | VGS(th) | Ciss | Coss | Crss | Qg | Qgs | Qgd | IS | ISM | VSD | Trr | Qrr | RJC | RJA |
| SVF2N60M | TO-251-3L | 600V | 30V | 2.0A | 34W | 3.7 | 600V | 1.0A | 100nA | 2.0-4.0V | 250.1pF | 35.7pF | 1.1pF | 5.67nC | 1.74nC | 1.99nC | 2.0A | 8.0A | 1.4V | 230ns | 1.0C | 3.7C/W | 110C/W |
| SVF2N60F | TO-220F-3L | 600V | 30V | 2.0A | 44W | 3.7 | 600V | 1.0A | 100nA | 2.0-4.0V | 250.1pF | 35.7pF | 1.1pF | 5.67nC | 1.74nC | 1.99nC | 2.0A | 8.0A | 1.4V | 230ns | 1.0C | 2.86C/W | 62.5C/W |
| SVF2N60T | TO-220-3L | 600V | 30V | 2.0A | 23W | 3.7 | 600V | 1.0A | 100nA | 2.0-4.0V | 250.1pF | 35.7pF | 1.1pF | 5.67nC | 1.74nC | 1.99nC | 2.0A | 8.0A | 1.4V | 230ns | 1.0C | 5.56C/W | 120C/W |
| SVF2N60D | TO-252-2L | 600V | 30V | 2.0A | 34W | 3.7 | 600V | 1.0A | 100nA | 2.0-4.0V | 250.1pF | 35.7pF | 1.1pF | 5.67nC | 1.74nC | 1.99nC | 2.0A | 8.0A | 1.4V | 230ns | 1.0C | 3.7C/W | 110C/W |
2410121332_Hangzhou-Silan-Microelectronics-SVF2N60M_C2897742.pdf
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