High Voltage MOSFET GOODWORK 18N65F with 0.41 Ohm On Resistance and 650V Drain Source Voltage Rating
Key Attributes
Model Number:
18N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
410mΩ@10V,9A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
110pF@300V
Number:
1 N-channel
Input Capacitance(Ciss):
4.35nF@300V
Pd - Power Dissipation:
260W
Gate Charge(Qg):
128nC@10V
Mfr. Part #:
18N65F
Package:
ITO-220AB
Product Description
Product Overview
The 18N65F is an N-Channel Enhancement Mode MOSFET designed for high-voltage applications. It features a 650V drain-source voltage, a low on-resistance of 0.41 (Typ.) at VGS = 10V, ID = 9A, and fast switching characteristics with improved dv/dt capability. This MOSFET is 100% avalanche tested and is suitable for demanding power applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition |
| Drain-Source Voltage | VDSS | 650 | V | VGS=0V, IDS=250A |
| Gate-Source Voltage | VGSS | ±30 | V | |
| Maximum Junction Temperature | TJ | 150 | °C | |
| Storage Temperature Range | TSTG | -55 to 150 | °C | |
| Diode Continuous Forward Current | ID | 18 | A | TC=25°C, Mounted on Large Heat Sink |
| Tested Continuous Drain Current | ID | 11.5 | A | TC=100°C, VGS=10V |
| Drain-Source On-state Resistance | RDS(ON) | 0.41 | Ω | VGS=10V, IDS=9A (Typ.) |
| Gate Threshold Voltage | VGS(th) | 3 | V | VDS=VGS, IDS=250A |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=650V, VGS=0V, TJ=125°C |
| Input Capacitance | Ciss | 4350 | pF | VGS=0V,VDS=0V,F=1MHz |
| Output Capacitance | Coss | 410 | pF | VGS=0V, VDS=300V, Frequency=1.0MHz |
| Reverse Transfer Capacitance | Crss | 110 | pF | VGS=0V, VDS=300V, Frequency=1.0MHz |
| Total Gate Charge | Qg | 128 | nC | VDD=300V, RL=100Ω, IDS=18A, VGEN=10V, RG=4.7Ω |
| Avalanche Energy, Single Pulsed | EAS | 500 | mJ | IAS=10A, VDD=100V, RG=50Ω, Starting TJ=25°C |
2408021728_GOODWORK-18N65F_C6068473.pdf
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