N Channel MOSFET GOODWORK 100N03 Tested for High Voltage and Current Applications in Power Systems
Key Attributes
Model Number:
100N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
RDS(on):
6.2mΩ@5V,20A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
221pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
105W
Input Capacitance(Ciss):
2nF@15V
Gate Charge(Qg):
41nC@10V
Mfr. Part #:
100N03
Package:
TO-252
Product Description
Product Overview
The 100N03 is an N-Channel Enhancement Mode MOSFET featuring Split Gate Trench MOSFET technology. It offers excellent package heat dissipation and a high-density cell design for low RDS(ON). This MOSFET is 100% UIS and VDS tested, making it suitable for DC-DC converters, power management functions, and industrial and motor drive applications.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
| On/Off States | BVDSS (VGS=0V, ID=250A) | 30 | V | ||
| IDSS (VDS=30V,VGS=0V) | 1 | A | |||
| IGSS (VGS=20V,VDS=0V) | 100 | nA | |||
| VGS(th) (VDS=VGS,ID=250A) | 1.0 | 1.5 | 2.5 | V | |
| gFS (VDS=5V,ID=20A) | 10 | 20 | S | ||
| On-State Resistance | RDS(ON) (VGS=10V, ID=30A) | 3.4 | 4.8 | m | |
| RDS(ON) (VGS=5V, ID=20A) | 6.2 | 8.0 | m | ||
| Dynamic Characteristics | Ciss (VDS=15V,VGS=0V, f=1.0MHz) | 2000 | pF | ||
| Coss (VDS=15V,VGS=0V, f=1.0MHz) | 248 | pF | |||
| Crss (VDS=15V,VGS=0V, f=1.0MHz) | 221 | pF | |||
| Gate Resistance | Rg (VGS=0V, VDS=0V,f=1.0MHz) | 1.43 | |||
| Switching Times | td(on) (VGS=10V, VDS=15V, RL=0.75,RGEN=3) | 55 | nS | ||
| tr (VGS=10V, VDS=15V, RL=0.75,RGEN=3) | 36.4 | nS | |||
| td(off) (VGS=10V, VDS=15V, RL=0.75,RGEN=3) | 37 | nS | |||
| tf (VGS=10V, VDS=15V, RL=0.75,RGEN=3) | 14 | nS | |||
| Gate Charge | Qg (VGS=10V, VDS=15V, ID=45A) | 41 | nC | ||
| Qgs (VGS=10V, VDS=15V, ID=45A) | 7 | nC | |||
| Qgd (VGS=10V, VDS=15V, ID=45A) | 10 | nC | |||
| Source-Drain Diode | ISD (Body Diode) | 90 | A | ||
| VSD (VGS=0V,IS=20A) | 1.2 | V |
2408021728_GOODWORK-100N03_C6068474.pdf
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