Surface Mount PNP Transistor Guangdong Hottech S9012 with High Collector Current and Compact Design

Key Attributes
Model Number: S9012
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
S9012
Package:
SOT-23
Product Description

Product Overview

The S9012 is a PNP bipolar transistor designed for surface mount applications. It offers excellent hFE linearity and high collector current capabilities, making it a complementary part to the S9013. Suitable for various electronic circuits requiring a PNP transistor in a compact SOT-23 package.

Product Attributes

  • Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
  • Origin: Not specified
  • Material: Molded Plastic
  • Classification Rating: UL 94V-0
  • Certifications: UL 94V-0

Technical Specifications

ParameterSymbolValueUnitConditions
Collector-Base VoltageVCBO-40V
Collector-Emitter VoltageVCEO-25V
Emitter-Base VoltageVEBO-5V
Collector CurrentIC-500mA
Collector Power DissipationPC300mW
Junction TemperatureTJ150C
Storage TemperatureTSTG-55 ~ +150C
Collector-base breakdown voltageV(BR)CBO-40VIC=-100uAIE=0
Collector-emitter breakdown voltageV(BR)CEO-25VIC=-1mAIB=0
Emitter-base breakdown voltageV(BR)EBO-5VIE=-100uAIC=0
Collector cut-off currentICBO-0.1uAVCB=-40V, IE=0
Collector cut-off currentICEO-0.1uAVCE=-20V, IB=0
Emitter cut-off currentIEBO-0.1uAVEB=-5V, IC=0
DC current gainhFE120 - 400VCE=-1V, IC=-50mA
Collector-emitter saturation voltageVCE(sat)-0.6VIC=-500mAIB=-50mA
Base-emitter saturation voltageVBE(sat)-1.2VIC=-500mAIB=-50mA
Transition frequencyfT150MHzVCE=-6V,IC=-20mA,f=30MHz
Collector output capacitanceCob5pFVCE=-10V, IE=0, f=1MHz

2410010101_Guangdong-Hottech-S9012_C2886438.pdf

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