PNP Bipolar Transistor Guangdong Hottech MMBTA92 with Molded Plastic Case and High Thermal Resistance
Key Attributes
Model Number:
MMBTA92
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
250nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
50MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-
Mfr. Part #:
MMBTA92
Package:
SOT-23
Product Description
MMBTA92 PNP Bipolar Transistor
The MMBTA92 is a PNP bipolar transistor designed for surface mount applications. It offers a high breakdown voltage and low collector-emitter saturation voltage, making it a complementary part to the MMBTA42. This device is suitable for various electronic circuits requiring a PNP transistor in a compact SOT-23 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Complementary to: MMBTA42
- Package Type: SOT-23
- Case Material: Molded Plastic
- UL Flammability Classification: 94V-0
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | -300 | V | |
| Collector-Emitter Voltage | VCEO | -300 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current (continuous) | IC | -200 | mA | |
| Collector Current (peak) | ICM | -500 | mA | |
| Collector Power Dissipation | PC | 300 | mW | (TA = 25C) |
| Thermal Resistance Junction To Ambient | RJA | 417 | C/W | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | -300 | V | IC=-100uA, IE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | -300 | V | IC=-1mA, IB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-100uA, IC=0 |
| Collector cut-off current | ICBO | -0.25 | uA | VCB=-200V, IE=0 |
| Emitter cut-off current | IEBO | -0.1 | uA | VEB=-5V, IC=0 |
| DC current gain (hFE1) | hFE1 | 60 | VCE=-10V, IC=-1mA | |
| DC current gain (hFE2) | hFE2 | 100 | 200 | VCE=-10V, IC=-10mA |
| DC current gain (hFE3) | hFE3 | 60 | VCE=-10V, IC=-30mA | |
| Collector-emitter saturation voltage | VCE(sat) | -0.2 | V | IC=-20mA, IB=-2mA |
| Base-emitter saturation voltage | VBE(sat) | -0.9 | V | IC=-20mA, IB=-2mA |
| Transition frequency | fT | 50 | MHz | VCE=-20V,IC=-10mA,f=30MHz |
SOT-23 Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| E | 1.200 | 1.400 | 0.047 | 0.055 |
| E1 | 2.250 | 2.550 | 0.089 | 0.100 |
| e | 0.950 TYP | 0.037 TYP | ||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.550 REF | 0.022 REF | ||
| L1 | 0.300 | 0.500 | 0.012 | 0.020 |
| 0 | 8 | 0 | 8 | |
2410121837_Guangdong-Hottech-MMBTA92_C181173.pdf
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