SOT23 Package NPN Transistor High Diode S9014 Suitable for General Purpose Electronic Applications
Key Attributes
Model Number:
S9014
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
S9014
Package:
SOT-23
Product Description
Product Overview
The S9014 is a high diode semiconductor NPN transistor in a SOT-23 plastic-encapsulated package. It is complementary to the S9015 transistor and is designed for general-purpose applications.
Product Attributes
- Brand: High Diode Semiconductor
- Package: SOT-23
- Type: NPN Transistor
- Complementary to: S9015
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | 50 | V | |||
| Collector-Emitter Voltage | VCEO | 45 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current | IC | 100 | mA | |||
| Collector Power Dissipation | PC | 200 | mW | |||
| Thermal Resistance (Junction to Ambient) | RJA | 625 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Collector-Base Breakdown Voltage | V(BR)CBO | IC= 100A, IE=0 | 50 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC= 0.1mA, IB=0 | 45 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector Cut-off Current | ICBO | VCB=50 V , IE=0 | 0.1 | A | ||
| Collector Cut-off Current | ICEO | VCE=35V , IB=0 | 1 | A | ||
| Emitter Cut-off Current | IEBO | VEB= 3V , IC=0 | 0.1 | A | ||
| DC Current Gain | hFE | VCE=5V, IC= 1mA | 200 | 1000 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=100 mA, IB= 5mA | 0.3 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat) | IC=100 mA, IB= 5mA | 1 | V | ||
| Transition Frequency | fT | VCE=5V, IC= 10mA f=30MHz | 150 | MHz |
2410121332_High-Diode-S9014_C466629.pdf
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