Transistor SOT23 Package Guangdong Hottech BC857C Plastic Encapsulate Ideal for AF Amplifier Circuits
Key Attributes
Model Number:
BC857C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
BC857C
Package:
SOT-23
Product Description
Product Overview
Plastic-encapsulate transistors ideally suited for automatic insertion, designed for switching and AF amplifier applications. Available in SOT-23 package.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
- Origin: China (implied by brand)
- Material: Plastic Encapsulate
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test conditions | BC856 | BC857 | BC858 | Unit |
| Collector-Base Voltage | VCBO | -80 | -50 | -30 | V | |
| Collector-Emitter Voltage | VCEO | -65 | -45 | -30 | V | |
| Emitter-Base Voltage | VEBO | -5 | -5 | -5 | V | |
| Collector Current - Continuous | IC | -0.1 | -0.1 | -0.1 | A | |
| Collector Power Dissipation | PC | 0.2 | 0.2 | 0.2 | W | |
| Junction Temperature | TJ | 150 | 150 | 150 | ||
| Storage Temperature | Tstg | -55 to +150 | -55 to +150 | -55 to +150 | ||
| Collector-base breakdown voltage | VCBO | IC= -10A, IE=0 | -80 | -50 | -30 | V |
| Collector-emitter breakdown voltage | VCEO | IC= -10mA, IB=0 | -65 | -45 | -30 | V |
| Emitter-base breakdown voltage | VEBO | IE= -1A, IC=0 | -5 | -5 | -5 | V |
| Collector cut-off current | ICBO | VCB= -70 V , IE=0 | -0.1 | A | ||
| Collector cut-off current | ICBO | VCB= -45 V , IE=0 | -0.1 | A | ||
| Collector cut-off current | ICBO | VCB= -25 V , IE=0 | -0.1 | A | ||
| Collector cut-off current | ICEO | VCE= -60 V , IB=0 | -0.1 | A | ||
| Collector cut-off current | ICEO | VCE= -40 V , IB=0 | -0.1 | A | ||
| Collector cut-off current | ICEO | VCE= -25 V , IB=0 | -0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= -5 V , IC=0 | -0.1 | -0.1 | -0.1 | A |
| DC current gain | hFE | VCE= -5V, IC= -2mA | 125-250 | 220-475 | 420-800 | |
| Collector-emitter saturation voltage | VCE(sat) | IC=-100mA, IB= -5 mA | -0.5 | -0.5 | -0.5 | V |
| Base-emitter saturation voltage | VBE(sat) | IC= -100mA, IB= -5mA | -1.1 | -1.1 | -1.1 | V |
| Transition frequency | fT | VCE= -5 V, IC= -10mA, f=100MHz | 100 | 100 | 100 | MHz |
| Collector capacitance | Cob | VCB=-10V, f=1MHz | 4.5 | 4.5 | 4.5 | pF |
2410122025_Guangdong-Hottech-BC857C_C181147.pdf
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