PNP Bipolar Transistor Guangdong Hottech BC857B with 50V Collector Base Breakdown Voltage in SOT23 Package
Key Attributes
Model Number:
BC857B
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BC857B
Package:
SOT-23
Product Description
Product Overview
The BC857 is a PNP bipolar transistor designed for automatic insertion, suitable for switching and AF amplifier applications. It is complementary to the BC847 and comes in a surface mount SOT-23 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Complementary To: BC847
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | -50 | V | |
| Collector-Emitter Voltage | VCEO | -45 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current | IC | -100 | mA | |
| Collector Power Dissipation | PC | 200 | mW | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | -50 | V | IC=-10uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | -45 | V | IC=-10mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-1uAIC=0 |
| Collector cut-off current | ICBO | -0.1 | uA | VCB=-45V, IE=0 |
| Emitter cut-off current | IEBO | -0.1 | uA | VEB=-5V, IC=0 |
| DC current gain | hFE1 | 110 | VCE=-5V, IC=-2mA | |
| DC current gain | hFE1 | 800 | VCE=-5V, IC=-2mA | |
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC=-100mAIB=-5mA |
| Base-emitter saturation voltage | VBE(sat) | -1.1 | V | IC=-100mAIB=-5mA |
| Transition frequency | fT | 100 | MHz | VCE=-5V,IC=-10mA,f=100MHz |
| Collector output capacitance | Cob | 4.5 | pF | VCE=-10V, IE=0, f=1MHz |
2410122030_Guangdong-Hottech-BC857B_C181146.pdf
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