Surface mount PNP transistor Guangdong Hottech MMBT5401 ideal for medium power switching and amplification uses
Key Attributes
Model Number:
MMBT5401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-
Mfr. Part #:
MMBT5401
Package:
SOT-23
Product Description
Product Overview
The MMBT5401 is a PNP bipolar transistor, serving as a complementary part to the MMBT5551. It is designed for medium power amplification and switching applications, housed in a surface-mount SOT-23 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Origin: China
- Case Material: Molded Plastic
- UL Flammability Classification: 94V-0
- Marking: 2L
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | -160 | V | |
| Collector-Emitter Voltage | VCEO | -150 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current | IC | -600 | mA | |
| Collector Power Dissipation | PC | 300 | mW | (TA = 25C) |
| Thermal Resistance Junction To Ambient | RJA | 416 | C/W | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | -160 | V | IC=-100uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | -150 | V | IC=-1mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-10uAIC=0 |
| Collector cut-off current | ICBO | -0.1 | uA | VCB=-120V, IE=0 |
| Emitter cut-off current | IEBO | -0.1 | uA | VEB=-4V, IC=0 |
| DC current gain (hFE1) | hFE1 | 80 | VCE=-5V, IC=-1mA | |
| DC current gain (hFE2) | hFE2 | 100 | 300 | VCE=-5V, IC=-10mA |
| DC current gain (hFE3) | hFE3 | 50 | VCE=-5V, IC=-50mA | |
| Collector-emitter saturation voltage | VCE(sat) | -0.2 | V | IC=-10mAIB=-1mA |
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC=-50mAIB=-5mA |
| Base-emitter saturation voltage | VBE(sat) | -1 | V | IC=-10mAIB=-1mA |
| Base-emitter saturation voltage | VBE(sat) | -1 | V | IC=-50mAIB=-5mA |
| Transition frequency | fT | 100 | MHz | VCE=-5V,IC=-10mA,f=30MHz |
2410121837_Guangdong-Hottech-MMBT5401_C181137.pdf
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