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quality Versatile High Diode 2N7002 N Channel MOSFET for portable device power management and load switching factory
quality Versatile High Diode 2N7002 N Channel MOSFET for portable device power management and load switching factory

Versatile High Diode 2N7002 N Channel MOSFET for portable device power management and load switching

Key Attributes
Model Number: 2N7002
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
Operating Temperature -:
-
RDS(on):
7Ω@5V,50mA
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
225mW
Mfr. Part #:
2N7002
Package:
SOT-23
Product Description

Product Overview

The 2N7002 is an N-Channel MOSFET from High Diode Semiconductor, designed for load switching in portable devices and DC/DC converters. It features a high-density cell design for low RDS(ON), making it a voltage-controlled small signal switch. This MOSFET is rugged, reliable, and offers high saturation current capability.

Product Attributes

  • Brand: High Diode Semiconductor
  • Product Type: MOSFET (N-Channel)
  • Marking: 2N7002
  • Package Type: SOT-23 Plastic-Encapsulated

Technical Specifications

Parameter Symbol Value Unit Test Conditions
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS=0 V, ID=250 A
Gate-Threshold Voltage Vth(GS) 1 - 1.6 V VDS=VGS, ID=250 A
Gate-body Leakage lGSS 80 nA VDS=0 V, VGS=20 V
Zero Gate Voltage Drain Current IDSS 80 nA VDS=60 V, VGS=0 V
On-state Drain Current ID(ON) 500 mA VGS=10 V, VDS=7 V
Drain-Source On-Resistance RDS(on)MAX 5 @10V VGS=10 V, ID=500mA
Drain-Source On-Resistance RDS(on)MAX 7 @5V VGS=5 V, ID=50mA
Continuous Drain Current ID 115 mA
Power Dissipation PD 0.225 W
Junction Temperature TJ 150
Storage Temperature Tstg -50 ~+150
Gate-Source Voltage VGS 20 V
Forward Transconductance gfs 80 mS VDS=10 V, ID=200mA
Drain-source on-voltage VDS(on) 0.5 - 3.75 V VGS=10V, ID=500mA
Drain-source on-voltage VDS(on) 0.05 - 0.375 V VGS=5V, ID=50mA
Diode Forward Voltage VSD 0.55 - 1.2 V IS=115mA, VGS=0 V
Input Capacitance Ciss 50 pF VDS=25V, VGS=0V, f=1MHz
Output Capacitance Coss 25 pF VDS=25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance Crss 5 pF VDS=25V, VGS=0V, f=1MHz
Turn-on Time td(on) 20 ns VDD=25 V, RL=50 , ID=500mA,VGEN=10 V, RG=25
Turn-off Time td(off) 40 ns VDD=25 V, RL=50 , ID=500mA,VGEN=10 V, RG=25

* Parameters marked with * have no way to verify.


2410121245_High-Diode-2N7002_C466660.pdf

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