Plastic Encapsulated NPN Transistor Guangdong Hottech BC807-25 Collector Base Voltage Minus 50 Volts

Key Attributes
Model Number: BC807-25
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
BC807-25
Package:
SOT-23
Product Description

Product Overview

Plastic-encapsulated transistors, ideally suited for automatic insertion. Features epitaxial planar die construction and complementary NPN type availability (BC817). Available in BC807-16, BC807-25, and BC807-40 variants.

Product Attributes

  • Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
  • Origin: China (implied by brand)
  • Material: Plastic-Encapsulate

Technical Specifications

ParameterSymbolBC807-16BC807-25BC807-40UnitTest Conditions
Collector-Base VoltageVCBO -50VIC= -10A, IE=0
Collector-Emitter VoltageVCEO -45VIC= -10mA, IB=0
Emitter-Base VoltageVEBO -5VIE= -1A, IC=0
Collector Current -ContinuousIC -500mATA=25
Collector Power DissipationPC 300mWTA=25
Junction TemperatureTJ 150
Storage TemperatureTstg -55 to +150
Collector cut-off currentICBO -0.1uAVCB= -45V, IE=0
Collector cut-off currentICEO -0.2uAVCE= -40V, IB=0
Emitter cut-off currentIEBO -0.1uAVEB= -4 V, IC=0
DC current gainhFE100250400VCE= -1V, IC= -100mA
DC current gainhFE160250600VCE= -1V, IC= -100mA
Collector-emitter saturation voltageVCE(sat) -0.7VIC=-500mA, IB= -50mA
Base-emitter saturation voltageVBE(sat) -1.2VIC= -500mA, IB= -50mA
Transition frequencyfT 100MHzVCE= -5V, IC= -10mA, f=100MHz
Thermal Resistance Junction to AmbientRJA 417/W
Collector capacitanceCc 9PFIE = 0; VCB = -10 V, f = 1 MHz

2409302202_Guangdong-Hottech-BC807-25_C181150.pdf

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