Low Voltage Schottky Diode Guangdong Hottech 1N5817WS Suitable for Inverter Polarity Protection
Key Attributes
Model Number:
1N5817WS
Product Custom Attributes
Reverse Leakage Current (Ir):
9A
Non-Repetitive Peak Forward Surge Current:
9A
Diode Configuration:
Independent
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
20V
Voltage - Forward(Vf@If):
750mV@3.0A
Current - Rectified:
1A
Mfr. Part #:
1N5817WS
Package:
SOD-323
Product Description
Product Overview
The 1N5817WS, 1N5818WS, and 1N5819WS are Schottky Barrier Diodes designed for low voltage, high frequency applications. They feature a low forward voltage and are suitable for use in inverters and polarity protection circuits. These surface mount devices come in a SOD-323 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded Plastic
- UL Flammability Classification Rating: 94V-0
Technical Specifications
| Model | Maximum Recurrent Peak Reverse Voltage (V) | Maximum RMS Voltage (V) | Maximum DC Blocking Voltage (V) | Maximum Average Forward Rectified Current (A) | Peak Forward Surge Current (A) (8.3ms) | Maximum Forward Voltage at 1.0A DC (V) | Maximum Forward Voltage at 3.0A DC (V) | Typical Junction Capacitance (pF) (f=1MHz, VR=4V) | Typical Thermal Resistance (C/W) (Junction to Ambient) | Operating and Storage Temperature Range (C) |
| 1N5817WS | 20 | 14 | 20 | 1.0 | 9 | 0.45 | 0.75 | 110 | 80 | -50 to +125 |
| 1N5818WS | 30 | 21 | 30 | 1.0 | 9 | 0.55 | 0.875 | 110 | 80 | -50 to +125 |
| 1N5819WS | 40 | 28 | 40 | 1.0 | 9 | 0.60 | 0.90 | 110 | 80 | -50 to +125 |
2410121849_Guangdong-Hottech-1N5817WS_C5190152.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
