Low Forward Voltage Schottky Diode Guangdong Hottech 1N5819W Molded Plastic Case with PN Junction Guard Ring
Key Attributes
Model Number:
1N5819W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
9A
Reverse Leakage Current (Ir):
1mA@40V
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
900mV@3A
Current - Rectified:
1A
Mfr. Part #:
1N5819W
Package:
SOD-123
Product Description
Product Overview
This Schottky Barrier Diode is designed for high-frequency inverter applications. It features a low forward voltage, a small surface mount device package (SOD-123), and a PN junction guard ring for transient and ESD protection. Its low capacitance makes it suitable for various electronic circuits.
Product Attributes
- Brand: HOTTECH
- Origin: GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
Technical Specifications
| Model | Peak Reverse Voltage (VR) | RMS Reverse Voltage (VR(RMS)) | Forward Current (IF) | Non-Repetitive Peak Forward Surge Current (IFSM) @ t=8.3ms | Power Dissipation (PD) | Thermal Resistance (RJA) | Junction Temperature (TJ) | Storage Temperature (TSTG) | Max Forward Voltage (VF) @ IF=1.0A | Max Forward Voltage (VF) @ IF=3.0A | Max Reverse Breakdown Voltage (IR=1mA) | Max Reverse Current (IR) @ VR=20V | Type Junction Capacitance (CT) @ VR=4.0V, f=1MHz |
| 1N5817W | 40 V | 28 V | 1 A | 9 A | 500 mW | 200 C/W | 125 C | -55 ~+150 C | 0.450 V | 0.750 V | 20 V | 1.0 mA | 120 pF |
| 1N5818W | 40 V | 28 V | 1 A | 9 A | 500 mW | 200 C/W | 125 C | -55 ~+150 C | 0.550 V | 0.875 V | 30 V | 1.0 mA | 120 pF |
| 1N5819W | 40 V | 28 V | 1 A | 9 A | 500 mW | 200 C/W | 125 C | -55 ~+150 C | 0.600 V | 0.900 V | 40 V | 1.0 mA | 120 pF |
2410121844_Guangdong-Hottech-1N5819W_C2988774.pdf
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