Surface mount Schottky Barrier Diode Guangdong Hottech SS24F optimized for low voltage high frequency
Key Attributes
Model Number:
SS24F
Product Custom Attributes
Reverse Leakage Current (Ir):
50A
Non-Repetitive Peak Forward Surge Current:
50A
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
550mV@2A
Current - Rectified:
2A
Mfr. Part #:
SS24F
Package:
SMAF
Product Description
Product Overview
The SS22F-SS220F is a Schottky Barrier Diode designed for low voltage, high frequency applications. It features a small surface mount device package (SMAF) with low power loss and high efficiency. The diode offers high forward surge current capability, making it suitable for use in inverters, free wheeling circuits, and polarity protection applications.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Origin: China
- Case Material: Molded Plastic
- UL Flammability Classification: 94V-0
- Weight: 0.027 grams (approximate)
Technical Specifications
| Parameter | Symbol | SS22F | SS24F | SS26F | SS28F | SS210F | SS212F | SS215F | SS220F | Unit | Conditions |
| Repetitive peak reverse voltage | VRRM | 20 | 40 | 60 | 80 | 100 | 120 | 150 | 200 | V | |
| DC Reverse Voltage | VR | 20 | 40 | 60 | 80 | 100 | 120 | 150 | 200 | V | |
| RMS Reverse Voltage | VRMS | 14 | 28 | 42 | 56 | 70 | 84 | 105 | 140 | V | |
| Non-Repetitive Peak Forward Surge Current @ t = 8.3 ms | IFSM | 50 | A | ||||||||
| Mean rectifying current | IF | 2.0 | A | ||||||||
| Thermal Resistance From Junction To Ambient | RJA | 85 | C/W | ||||||||
| Junction Temperature | TJ | 125 | C | ||||||||
| Storage Temperature | TSTG | -55 ~+150 | C | ||||||||
| Forward voltage | VF | 0.55 | 0.70 | 0.85 | 0.95 | V | IF=2A | ||||
| Reverse current | IR | 0.5 | 0.3 | mA | T=25C, V=VR | ||||||
| Reverse current | IR | 10 | 5 | mA | T=100C | ||||||
| Junction capacitance | CJ | 220 | 80 | pF | VR=4V,f=1MH | ||||||
2409302333_Guangdong-Hottech-SS24F_C190803.pdf
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