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quality Low conduction loss Schottky diode Guangdong Hottech BAT20J suitable for compact high speed switching factory
quality Low conduction loss Schottky diode Guangdong Hottech BAT20J suitable for compact high speed switching factory

Low conduction loss Schottky diode Guangdong Hottech BAT20J suitable for compact high speed switching

Key Attributes
Model Number: BAT20J
Product Custom Attributes
Reverse Leakage Current (Ir):
12uA@15V
Non-Repetitive Peak Forward Surge Current:
5A
Voltage - DC Reverse (Vr) (Max):
23V
Voltage - Forward(Vf@If):
620mV@1A
Current - Rectified:
1A
Mfr. Part #:
BAT20J
Package:
SOD-323
Product Description

Product Overview

The BAT20J is a Schottky barrier diode designed for applications requiring low conduction losses, very low reverse current, and negligible switching losses. Its low capacitance and fast switching characteristics make it suitable for high-speed switching applications. The diode is housed in a compact SOD-323 package.

Product Attributes

  • Brand: HOTTECH
  • Origin: GUANGDONG
  • Case Material: Molded Plastic
  • UL Flammability Classification Rating: 94V-0

Technical Specifications

ParameterSymbolValueUnitConditions
Repetitive Peak Reverse VoltageVRRM23V
Repetitive Peak Forward CurrentIF(RMS)2A
Average Forward Current (= 0.38)IF(AV)1A
Non-Repetitive Peak Forward Surge Current @ t =10msIFSM5A
Power DissipationPD200mW
Thermal Resistance From Junction To Ambient*RJA600C/WMounted on epoxy board without copper heat sink.
Maximum Operating Junction TemperatureTJ150C
Storage TemperatureTSTG-65 ~+150C
Maximum Temperature for SolderingTL260C
Reverse Breakdown VoltageV(BR)23VIR=100A
Forward VoltageVF0.28 - 0.31VIF=10mA,TJ=25C
Forward VoltageVF0.35 - 0.40VIF=100mA,TJ=25C
Forward VoltageVF0.54 - 0.62VIF=1A ,TJ=25C
Reverse Voltage Leakage Current (Pulse test tp=380s , <2%)IR0.65 - 2uAVR=5V,TJ=25C
Reverse Voltage Leakage Current (Pulse test tp=380s , <2%)IR0.88 - 3uAVR=8V,TJ=25C
Reverse Voltage Leakage Current (Pulse test tp=380s , <2%)IR3 - 12uAVR=15V,TJ=25C
Reverse Voltage Leakage Current (Pulse test tp=5ms , <2%)IR55 - 120uAVR=5V,TJ=85C
Reverse Voltage Leakage Current (Pulse test tp=5ms , <2%)IR70 - 150uAVR=8V,TJ=85C
Reverse Voltage Leakage Current (Pulse test tp=5ms , <2%)IR120 - 250uAVR=15V,TJ=85C
Diode CapacitanceCD20 - 100pFVR=5V,f=1MHz

2507111630_Guangdong-Hottech-BAT20J_C49238173.pdf

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