Compact dual digital transistor component HT Shenzhen Jinyu Semicon PT5311DW for circuit integration
Key Attributes
Model Number:
PT5311DW
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
10kΩ
Resistor Ratio:
1
Mfr. Part #:
PT5311DW
Package:
SOT-363
Product Description
Product Overview
The PT5311DW is a DUAL DIGITAL TRANSISTOR (NPN+PNP) designed for efficient circuit integration. Its independent transistor elements prevent interference, while the integrated package halves mounting costs and space requirements. This component is ideal for applications where space and cost efficiency are critical.
Product Attributes
- Brand: JinYu
- Part Number: PT5311DW
- Package: SOT-363
- Date: 2021/12
Technical Specifications
| Parameter | Symbol | NPN Limits (Unit) | NPN Conditions | PNP Limits (Unit) | PNP Conditions |
| Supply voltage | VCC | 50 V | Ta=25 | -50 V | Ta=25 |
| Input voltage | VIN | -10~+40 V | Ta=25 | -40~+10 V | Ta=25 |
| Output current | ICM | 100 mA | Ta=25 | -100 mA | Ta=25 |
| Power dissipation | PD | 150 mW | Ta=25 | 150 mW | Ta=25 |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55~+150 | -55~+150 | ||
| Input voltage (off) | VI(off) | VCC=5V ,IO=100A | VCC=-5V ,IO=-100A | ||
| Input voltage (on) | VI(on) | 3 V | VO=0.3V ,IO=10mA | -3 V | VO=-0.3V ,IO=-10mA |
| Output voltage (on) | VO(on) | 0.3 V | IO/II=10mA/0.5mA | -0.3 V | IO/II=-10mA/-0.5mA |
| Input current | II | 0.88 mA | VI=5V | -0.88 mA | VI=-5V |
| Output current (off) | IO(off) | 0.5 A | VCC=50V, VI=0 | -0.5 A | VCC=-50V, VI=0 |
| DC current gain | GI | 30 | VO=5V,IO=5mA | 30 | VO=-5V,IO=-5mA |
| Input resistance | R1 | 7 10 13 k | 7 10 13 k | ||
| Resistance ratio | R2/R1 | 0.8 1 1.2 | 0.8 1 1.2 | ||
| Transition frequency | fT | 250 MHz | VCE=10V ,IE=-5mA,f=100MHz | 250 MHz | VCE=-10V ,IE=5mA,f=100MHz |
2508131726_HT-Shenzhen-Jinyu-Semicon-PT5311DW_C5188653.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
