Low Gate Charge and Excellent RDS ON Guangdong Hottech 9435 P Channel Enhancement Mode Power MOSFET
Key Attributes
Model Number:
9435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
105mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
150pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.04nF
Output Capacitance(Coss):
420pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
9435
Package:
SOP-8
Product Description
Product Description
The 9435 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 4.5V. This device is well-suited for applications such as load switching and Pulse Width Modulation (PWM).
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
- Material: Plastic-Encapsulate
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | -5.1 | A | |||
| Drain Current-Pulsed | IDM | Note 1 | -20 | A | ||
| Maximum Power Dissipation | PD | 2 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | Note 2 | 50 | /W | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -30 | -33 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V,VGS=0V | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -1 | -2 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-5.1A | 55 | m | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-6V, ID=-4.7A | 70 | m | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-2A | 105 | m | ||
| Forward Transconductance | gFS | VDS=-15V,ID=-4.5A | 4 | 7 | S | |
| Input Capacitance | Clss | 1040 | PF | |||
| Output Capacitance | Coss | 420 | PF | |||
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V, F=1.0MHz | 150 | PF | ||
| Turn-on Delay Time | td(on) | VDD=-15V, ID=-1A, VGS=-10V,RGEN=6 | 15 | nS | ||
| Turn-on Rise Time | tr | VDD=-15V, ID=-1A, VGS=-10V,RGEN=6 | 13 | nS | ||
| Turn-Off Delay Time | td(off) | VDD=-15V, ID=-1A, VGS=-10V,RGEN=6 | 58 | nS | ||
| Turn-Off Fall Time | tf | VDD=-15V, ID=-1A, VGS=-10V,RGEN=6 | 21 | nS | ||
| Total Gate Charge | Qg | VDS=-15V,ID=-5.1A,VGS=-10V | 12 | nC | ||
| Gate-Source Charge | Qgs | VDS=-15V,ID=-5.1A,VGS=-10V | 2.2 | nC | ||
| Gate-Drain Charge | Qg d | VDS=-15V,ID=-5.1A,VGS=-10V | 3 | nC | ||
| Diode Forward Voltage | VSD | VGS=0V,IS=-1.7A | -1.2 | V |
2410121440_Guangdong-Hottech-9435_C181098.pdf
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