power management solution featuring Guangdong Hottech IRLML2502 N channel MOSFET with ultra low on resistance
Key Attributes
Model Number:
IRLML2502
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-40℃~+150℃
RDS(on):
50mΩ@2.5V,3.6A
Gate Threshold Voltage (Vgs(th)):
600mV
Reverse Transfer Capacitance (Crss@Vds):
66pF@10V
Number:
1 N-channel
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
740pF@10V
Gate Charge(Qg):
8nC@10V
Mfr. Part #:
IRLML2502
Package:
SOT-23
Product Description
IRLML2502 MOSFET (N-CHANNEL)
The IRLML2502 is an N-channel MOSFET designed for fast switching and ultra-low on-resistance. It is a surface-mount device housed in a SOT-23 package, making it suitable for various electronic applications requiring efficient power management.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Origin: China (implied by company name and email)
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions | |
| MAXIMUM RATINGS | |||||
| Drain-source voltage | VDS | 20 | V | TA = 25C unless otherwise noted | |
| Gate-source voltage | VGS | ±12 | V | TA = 25C unless otherwise noted | |
| Continuous drain current | ID | 4.2 | A | TA = 25C unless otherwise noted | |
| Pulsed drain current (Note 1) | IDM | 33 | A | TA = 25C unless otherwise noted | |
| Power dissipation | PD | 1.25 | W | TA = 25C unless otherwise noted | |
| Thermal resistance from Junction to ambient | RθJA | 100 | °C/W | TA = 25°C unless otherwise noted | |
| Junction temperature | TJ | 150 | °C | TA = 25°C unless otherwise noted | |
| Storage temperature | TSTG | -55 ~+150 | °C | TA = 25°C unless otherwise noted | |
| ELECTRICAL CHARACTERISTICS | |||||
| Drain-Source breakdown voltage | V(BR)DSS | 20 | V | VGS=0V, ID=250μA | |
| Zero gate voltage drain current | IDSS | 1 | μA | VDS=16V, VGS=0V | |
| Gate-body leakage current | IGSS | ±100 | nA | VDS=0V, VGS=±12V | |
| Gate-threshold voltage (note 1) | VGS(th) | 0.6 | 1.2 | V | VDS=VGS, ID=250μA |
| Drain-source on-resistance (note 1) | RDS(ON) | 35 | 45 | mΩ | VGS=4.5V, ID=4.2A |
| Drain-source on-resistance (note 1) | RDS(ON) | 50 | 80 | mΩ | VGS=2.5V, ID=3.6A |
| Forward transconductance (note 1) | gFS | 2.8 | S | VDS=10V, ID=4.0A | |
| Diode forward voltage (note 1) | VSD | 1.2 | V | IS=1.3A, VGS=0V,Tj=25°C | |
| Diode forward current | IS | 1.3 | A | Tj=25°C | |
| Input capacitance | Ciss | 740 | pF | VDS=15V, VGS=0V, f=1MHz | |
| Output capacitance | Coss | 90 | pF | VDS=15V, VGS=0V, f=1MHz | |
| Reverse transfer capacitance | Crss | 66 | pF | VDS=15V, VGS=0V, f=1MHz | |
| Turn-on delay time | td(on) | 7.5 | nS | VDD=10V,ID=1A, RGEN=6Ω,RL=10Ω | |
| Turn-on rise time | tr | 10 | nS | VDD=10V,ID=1A, RGEN=6Ω,RL=10Ω | |
| Turn-off delay time | td(off) | 54 | nS | VDD=10V,ID=1A, RGEN=6Ω,RL=10Ω | |
| Turn-off fall time | tf | 26 | nS | VDD=10V,ID=1A, RGEN=6Ω,RL=10Ω | |
| Total gate charge | Qg | 8 | 12 | nC | VDS=10V,VGS=5V,ID=4A |
| Gate-source charge | Qgs | 1.8 | 2.7 | nC | VDS=10V,VGS=5V,ID=4A |
| Gate-drain charge | Qgd | 1.7 | 2.6 | nC | VDS=10V,VGS=5V,ID=4A |
2410122022_Guangdong-Hottech-IRLML2502_C5364308.pdf
Related Products
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
