Power Management Solutions Featuring Guangdong Hottech HKTD15N10 N Channel Power MOSFET for Switching
Key Attributes
Model Number:
HKTD15N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
110mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
35pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
34W
Input Capacitance(Ciss):
800pF
Mfr. Part #:
HKTD15N10
Package:
TO-252
Product Description
Product Overview
The HKTD15N10 is an N-CHANNEL Power MOSFET designed for high-performance applications. It features a high density cell design for ultra-low on-resistance and is fully characterized for avalanche energy. This MOSFET is suitable for various power management tasks requiring efficient switching and low conduction losses.
Product Attributes
- Brand: HOTTECH
- Origin: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded Plastic
- Flammability: UL 94V-0
- Marking: D15N10
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| OFF CHARACTERISTICS | V(BR)DS | VGS=0V,ID=250A | 100 | V | ||
| IDSS | VDS=100V, VGS=0V | 1 | uA | |||
| IGSS | VDS=0V, VGS=20V | 100 | nA | |||
| VGS(th) | VDS=VGS, ID=250A | 1 | 1.8 | 2.5 | V | |
| ON CHARACTERISTICS | RDS(ON) | VGS=10V, ID=10A | 80 | 100 | m | |
| RDS(ON) | VGS=4.5V,ID=10A | 90 | 110 | m | ||
| gFS | VDS=5V,ID=10A | 10 | S | |||
| DYNAMIC CHARACTERISTICS | Ciss | VGS=0V VDS=50V f=1.0MHz | 800 | pF | ||
| Coss | 40 | pF | ||||
| Crss | 35 | pF | ||||
| SWITCHING CHARACTERISTICS | td(on) | VDD=50V ID=10A RG=3 VGS=10V | 5 | ns | ||
| tr | 40 | ns | ||||
| td(off) | VDS=50V,VGS=10V, ID=10A | 20 | ns | |||
| tf | 8 | ns | ||||
| GATE CHARGE | Qg | 16 | nC | |||
| Qgs | 3 | nC | ||||
| Qgd | 3.2 | nC | ||||
| DRAIN-SOURCE DIODE CHARACTERISTICS | VSD | IS=15A,VGS=0V | 0.8 | 1.2 | V | |
| IS | 15 | A | ||||
| MAXIMUM RATINGS | VDS | 100 | V | |||
| ID | Continuous drain current, VGS=10 | 15 | A | |||
| IDM | Pulsed drain current (Note 1) | 60 | A | |||
| PD | Power dissipation | 100 | W | |||
| RJA | Thermal resistance from junction to ambient | 110 | C/W | |||
| TJ,TSTG | Operating junction and storage temperature | -55 | +150 | C | ||
| EAS | Single Pulsed Avalanche Energy (note 1) | 10 | mJ | |||
| TL | Lead Temperature for Soldering Purposes (1/8 from case for 10s) | 260 | C |
2410121550_Guangdong-Hottech-HKTD15N10_C5364289.pdf
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