power Guangdong Hottech AO4407 P channel enhancement mode MOSFET with maximum drain current of 12 amperes
Key Attributes
Model Number:
AO4407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
RDS(on):
30mΩ@5V,7A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.8V
Reverse Transfer Capacitance (Crss@Vds):
295pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
3.1W
Input Capacitance(Ciss):
2.6nF@15V
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
AO4407
Package:
SOP-8
Product Description
Product Overview
The AO4407 is a P-CHANNEL ENHANCEMENT MODE MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. This lead-free product offers a maximum VDS of -30V and a maximum ID of -12A, with low RDS(ON) values at various gate-source voltages. It is suitable for applications requiring efficient power switching.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Product Name: AO4407
- Type: P-CHANNEL ENHANCEMENT MODE MOSFET
- Case Material: Molded plastic
- Flammability Rating: UL 94V-0
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | VDSS | ID=-250A,VGS=0V | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS=-30V,VGS = 0V | -1 | A | ||
| Zero gate voltage drain current | IDSS | VDS=-30V,VGS=0V,TJ=55C | -5 | A | ||
| Gate-body leakage current | IGSS | VDS=0V,VGS=25V | 100 | nA | ||
| Gate threshold voltage | VGS(t) | VDS=VGS,ID=-250A | -1.7 | -2.25 | -2.8 | V |
| On state drain current | ID(ON) | VGS=-10V,VDS=-5V | -60 | A | ||
| Static drain-source on-resistance | RDS(ON) | VGS=-20V,ID=-12A | 8.5 | 13 | m | |
| Static drain-source on-resistance | RDS(ON) | VGS=-10V,ID=-12A | 10 | 14 | m | |
| Static drain-source on-resistance | RDS(ON) | VGS=-10V,ID=-12A,TJ=125C | 12 | 19 | m | |
| Static drain-source on-resistance | RDS(ON) | VGS=-5V,ID=-7A | 19 | 30 | m | |
| Forward transconductance | gFS | VDS=-5V,ID=-10.5A | 27 | S | ||
| Diode forward voltage | VSD | IS=-1A,VGS=0V | -0.72 | -1 | V | |
| Maximum body-diode continuous current | IS | -4 | A | |||
| Input capacitance | Ciss | VGS=0V,VDS=-15V,f=1MHz | 2060 | 2600 | pF | |
| Output capacitance | Coss | VGS=0V,VDS=-15V,f=1MHz | 370 | pF | ||
| Reverse transfer capacitance | Crss | VGS=0V,VDS=-15V,f=1MHz | 295 | pF | ||
| Gate resistance | Rg | VGS=0V,VDS=0V,f=1MHz | 1.2 | 3.6 | ||
| Total gate charge | Qg | VGS=-10V,VDS=-15V, ID=-12A | 24 | 39 | nC | |
| Gate source charge | Qgs | VGS=-10V,VDS=-15V, ID=-12A | 4.6 | nC | ||
| Gate drain charge | Qgd | VGS=-10V,VDS=-15V, ID=-12A | 10 | nC | ||
| Turn-on delay time | tD(on) | VGS=-10V, VDS=-15V, RL=1.25, RGEN=3 | 11 | ns | ||
| Turn-on rise time | tr | VGS=-10V, VDS=-15V, RL=1.25, RGEN=3 | 9.4 | ns | ||
| Turn-off delay time | tD(off) | VGS=-10V, VDS=-15V, RL=1.25, RGEN=3 | 24 | ns | ||
| Turn-off fall time | tf | VGS=-10V, VDS=-15V, RL=1.25, RGEN=3 | 12 | ns | ||
| Body diode reverse recovery time | trr | IF=-12A, dI/dt=100A/s | 30 | 40 | ns | |
| Body diode reverse recovery charge | Qrr | IF=-12A, dI/dt=100A/s | 22 | nC | ||
| Drain-source voltage | VDS | -30 | V | |||
| Gate-source voltage | VGS | 25 | V | |||
| Continuous drain current | ID | TA=25C | -12 | -9.2 | A | |
| Continuous drain current | ID | TA=70C | -10 | -7.4 | A | |
| Pulsed drain current | IDM | (note 1) | -60 | A | ||
| Avalanche current | IAR | (note 1) | 26 | A | ||
| Repetitive avalanche energy | EAR | L=0.3Mh (note 1) | 101 | mJ | ||
| Power dissipation | PD | TA=25C (note 2) | 3.1 | 1.7 | W | |
| Power dissipation | PD | TA=70C (note 2) | 2.0 | 1.1 | W | |
| Junction and storage temperature range | TJ, TSTG | -55 | 150 | C | ||
| Maximum junction-to-ambient thermal resistance | RJA | (note 3) | Typ.:32 | Max.:40 | C/W | |
| Maximum junction-to-ambient thermal resistance | RJA | (note 3) | Typ.:60 | Max.:75 | C/W | |
| Maximum junction-to-lead thermal resistance | RJL | (note 3,4) | Typ.:17 | Max.:24 | C/W |
2409302200_Guangdong-Hottech-AO4407_C5364281.pdf
Related Products
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
