P Channel MOSFET 60V HUASHUO HSBB6113 Featuring Fast Switching and Low RDS ON for Power Management Solutions

Key Attributes
Model Number: HSBB6113
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.08nF@15V
Pd - Power Dissipation:
2W
Gate Charge(Qg):
11.8nC@4.5V
Mfr. Part #:
HSBB6113
Package:
PRPAK3x3-8L
Product Description

HSBB6113 P-Ch 60V Fast Switching MOSFETs

The HSBB6113 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.

Product Overview

The HSBB6113 is a P-channel, 60V fast-switching MOSFET featuring high cell density trench technology. It provides excellent RDS(ON) and low gate charge, making it suitable for synchronous buck converter applications. The device is RoHS compliant, a Green Product, and 100% EAS guaranteed, ensuring reliability.

Product Attributes

  • Brand: HS-Semi
  • Product Type: P-Channel MOSFET
  • Voltage Rating: 60V
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage -60 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current, VGS @ -10V1 -13 A
ID@TC=100 Continuous Drain Current, VGS @ -10V1 -8.3 A
IDM Pulsed Drain Current2 -26 A
EAS Single Pulse Avalanche Energy3 29.7 mJ
IAS Avalanche Current 24.4 A
PD@TA=25 Total Power Dissipation4 2 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-Ambient --- 62 /W
RJC Thermal Resistance Junction-Case1 --- 4 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -60 --- --- V
BVDSS/TJ BVDSS Temperature Coefficient Reference to 25 , ID=-1mA --- -0.03 --- V/
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-10A --- --- 90 m
VGS=-4.5V , ID=-5A --- --- 115
VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 --- -2.5 V
VGS(th) VGS(th) Temperature Coefficient --- 4.56 --- mV/
IDSS Drain-Source Leakage Current VDS=-48V , VGS=0V , TJ=25 --- --- 1 uA
VDS=-48V , VGS=0V , TJ=55 --- --- 5
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
gfs Forward Transconductance VDS=-5V , ID=-3A --- 8.7 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 15 ---
Qg Total Gate Charge (-4.5V) VDS=-48V , VGS=-4.5V , ID=-3A --- 11.8 --- nC
Qgs Gate-Source Charge --- 1.9 --- nC
Qgd Gate-Drain Charge --- 6.5 --- nC
td(on) Turn-On Delay Time VDD=-15V , VGS=-10V , RG=3.3, ID=-1A --- 8.8 --- ns
tr Rise Time --- 19.6 --- ns
td(off) Turn-Off Delay Time --- 47.2 --- ns
tf Fall Time --- 9.6 --- ns
Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 1080 --- pF
Coss Output Capacitance --- 73 --- pF
Crss Reverse Transfer Capacitance --- 50 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- -13 A
ISM Pulsed Source Current2,5 --- --- -26 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25 --- --- -1 V

Notes:
1. Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. Tested by pulsed, pulse width 300s, duty cycle 2%.
3. EAS data shows Max. rating. Test condition: VDD=-25V, VGS=-10V, L=0.1mH, IAS=-24.4A.
4. Power dissipation is limited by 150 junction temperature.
5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.

Ordering Information

Part Number Package Code Packaging
HSBB6113 SOP-8 3000/Tape&Reel

2410121455_HUASHUO-HSBB6113_C2903563.pdf
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.