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quality High cell density HUASHUO HSBA4052 N channel trench MOSFET offering low gate charge and power conversion factory
quality High cell density HUASHUO HSBA4052 N channel trench MOSFET offering low gate charge and power conversion factory

High cell density HUASHUO HSBA4052 N channel trench MOSFET offering low gate charge and power conversion

Key Attributes
Model Number: HSBA4052
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.9mΩ@4.5V,10A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
38pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
27.8W
Gate Charge(Qg):
5.8nC@4.5V
Mfr. Part #:
HSBA4052
Package:
PRPAK5x6-8L
Product Description

Product Overview

The HSBA4052 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and low gate charge, contributing to efficient power conversion. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approved. Key benefits include super low gate charge and excellent CdV/dt effect decline, enabled by advanced high cell density Trench technology.

Product Attributes

  • Brand: HS-Semi
  • Technology: Trench MOSFET
  • Channel Type: N-Channel
  • Certifications: RoHS, Green Product
  • Reliability: 100% EAS Guaranteed

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage 20 V
ID@TC=25 Continuous Drain Current1 50 A
ID@TC=100 Continuous Drain Current1 32 A
IDM Pulsed Drain Current2 80 A
EAS Single Pulse Avalanche Energy3 48 mJ
IAS Avalanche Current 31 A
PD@TC=25 Total Power Dissipation4 27.8 W
TSTG Storage Temperature Range -55 150
TJ Operating Junction Temperature Range -55 150
Thermal Data
RJA Thermal Resistance Junction-ambient (Steady State)1 --- --- 60 /W
RJC Thermal Resistance Junction-Case1 --- --- 4.5 /W
Electrical Characteristics (TJ=25 , unless otherwise noted)
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=12A --- 6.9 8.5 m
VGS=4.5V , ID=10A --- 10.5 15 m
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.5 2.5 V
IDSS Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=25 --- --- 1 uA
VDS=32V , VGS=0V , TJ=55 --- --- 5 uA
IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 ---
Qg Total Gate Charge (4.5V) VDS=20V , VGS=4.5V , ID=12A --- 5.8 --- nC
Qgs Gate-Source Charge --- 3 --- nC
Qgd Gate-Drain Charge --- 1.2 --- nC
Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3 ID=1A --- 14.3 --- ns
Tr Rise Time --- 5.6 --- ns
Td(off) Turn-Off Delay Time --- 20 --- ns
Tf Fall Time --- 11 --- ns
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 690 --- pF
Coss Output Capacitance --- 193 --- pF
Crss Reverse Transfer Capacitance --- 38 --- pF
Diode Characteristics
IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 50 A
VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25 --- --- 1 V

Notes:
1 Tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 Tested by pulsed, pulse width 300s, duty cycle 2%.
3 EAS data shows Max. rating. Test condition: VDD=25V, VGS=10V, L=0.1mH, IAS=31A.
4 Power dissipation is limited by 150 junction temperature.
5 Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.


2410121516_HUASHUO-HSBA4052_C508834.pdf
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