100V N Channel MOSFET HUASHUO HSBA15810C with Low RDS ON and High Frequency Switching Capability
Key Attributes
Model Number:
HSBA15810C
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.725nF
Output Capacitance(Coss):
609pF
Pd - Power Dissipation:
208W
Gate Charge(Qg):
72nC@10V
Mfr. Part #:
HSBA15810C
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA15810C is a N-Channel 100V Fast Switching MOSFET designed for high-frequency switching applications. It features advanced high cell density Trench technology, offering super low RDS(ON) and 100% EAS Guaranteed. This MOSFET is ideal for applications such as motor drivers, Battery Management Systems (BMS), and high-frequency switching with synchronous rectification. A green device version is available.
Product Attributes
- Brand: HS-Semi
- Model: HSBA15810C
- Channel Type: N-Channel
- Technology: Trench
- Availability: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1,6 | 100 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1,6 | 95 | A | |||
| IDM | Pulsed Drain Current2 | 480 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 702 | mJ | |||
| IAS | Avalanche Current | 53 | A | |||
| PD@TC=25 | Total Power Dissipation4 | 208 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 0.6 | /W | ||
| Product Summary | ||||||
| VDS | 100 | V | ||||
| RDS(ON),typ | ID 100 A | 3.7 | m | |||
| ID | 100 | A | ||||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=30A | 3.7 | 4.5 | m | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=100V , VGS=0V , TJ=25 | --- | 1 | uA | |
| IDSS | Drain-Source Leakage Current | VDS=100V , VGS=0V , TJ=125 | --- | 10 | uA | |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=30A | 50 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1 | --- | ||
| Qg | Total Gate Charge (10V) | VDS=50V , VGS=10V , ID=20A | 72 | --- | nC | |
| Qgs | Gate-Source Charge | 28 | --- | |||
| Qgd | Gate-Drain Charge | 15 | --- | |||
| Td(on) | Turn-On Delay Time | VDD=50V , VGS=10V , RG=3.0, ID=20A | 35 | --- | ns | |
| Tr | Rise Time | 18 | --- | ns | ||
| Td(off) | Turn-Off Delay Time | 45 | --- | ns | ||
| Tf | Fall Time | 55 | --- | ns | ||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | 4725 | --- | pF | |
| Coss | Output Capacitance | 609 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 14 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 100 | A | |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=50A , TJ=25 | --- | 1.3 | V | |
| trr | Reverse Recovery Time | IF=30A , dI/dt=100A/s , TJ=25 | --- | 70 | nS | |
| Qrr | Reverse Recovery Charge | --- | 170 | nC | ||
Notes:
1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300s, duty cycle 2%.
3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.5mH, IAS=53A.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
6. Package limitation current.
2410121642_HUASHUO-HSBA15810C_C845605.pdf
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