Power MOSFET N Channel Hangzhou Silan Microelectronics SVF18N50PN for Switching in AC DC and DC DC Power Supplies
Key Attributes
Model Number:
SVF18N50PN
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
260mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Output Capacitance(Coss):
282pF
Input Capacitance(Ciss):
2.32nF
Pd - Power Dissipation:
240W
Gate Charge(Qg):
38nC@10V
Mfr. Part #:
SVF18N50PN
Package:
TO-3P
Product Description
Silan Microelectronics SVF18N50F(T)(PN)(FJ) N-CHANNEL MOSFET
The SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Pb free, Halogen free
Technical Specifications
| Part Number | Package | Drain-Source Voltage (VDS) | Gate-Source Voltage (VGS) | Drain Current (ID) @ TC=25C | Drain Current (ID) @ TC=100C | Drain Current Pulsed (IDM) | Power Dissipation (PD) @ TC=25C | RDS(on)(typ.) @ VGS=10V | BVDSS @ ID=250A | IDSS @ VDS=500V, VGS=0V | IGSS @ VGS=30V, VDS=0V | VGS(th) @ ID=250A | Ciss @ f=1.0MHz | Coss @ f=1.0MHz | Crss @ f=1.0MHz | td(on) @ VDD=250V, ID=18.0A, RG=25 | tr @ VDD=250V, ID=18.0A, RG=25 | td(off) @ VDD=250V, ID=18.0A, RG=25 | tf @ VDD=250V, ID=18.0A, RG=25 | Qg @ VDS=400V, ID=18.0A, VGS=10V | Qgs @ VDS=400V, ID=18.0A, VGS=10V | Qgd @ VDS=400V, ID=18.0A, VGS=10V | EAS @ L=30mH, IAS=8.60A, VDD=140V, RG=25 | RJC | RJA | Continuous Source Current (IS) | Pulsed Source Current (ISM) | Diode Forward Voltage (VSD) @ IS=18.0A, VGS=0V | Reverse Recovery Time (Trr) @ IS=18.0A, VGS=0V, dIF/dt=100A/s | Reverse Recovery Charge (Qrr) |
| SVF18N50F | TO-220F-3L | 500 V | 30 V | 18 A | 11 A | 72.0 A | 54 W (0.43 W/C) | 0.26 typ. | 500 V | 1.0 A | 100 nA | 2.0 - 4.0 V | 2320 pF | 282 pF | 7 pF | 60 ns | 131 ns | 115 ns | 75 ns | 38 nC | 12 nC | 12 nC | 1502 mJ | 2.31 C/W | 62.5 C/W | 18.0 A | 72.0 A | 1.3 V | 583 ns | 7.1 C |
| SVF18N50FJ | TO-220FJ-3L | |||||||||||||||||||||||||||||
| SVF18N50T | TO-220-3L | 232 W (1.86 W/C) | 0.54 C/W | 62.5 C/W | ||||||||||||||||||||||||||
| SVF18N50PN | TO-3P | -- |
2501091110_Hangzhou-Silan-Microelectronics-SVF18N50PN_C2761790.pdf
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