Power MOSFET Hangzhou Silan Microelectronics SVF18N50F N Channel 500V 18A for AC DC and Motor Driver
Key Attributes
Model Number:
SVF18N50F
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
260mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Output Capacitance(Coss):
282pF
Input Capacitance(Ciss):
2.32nF
Pd - Power Dissipation:
54W
Gate Charge(Qg):
38nC@10V
Mfr. Part #:
SVF18N50F
Package:
TO-220
Product Description
Silan Microelectronics SVF18N50F(T)(PN)(FJ) N-CHANNEL MOSFET
The SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field-effect transistor utilizing Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology offers reduced on-state resistance, superior switching performance, and enhanced high-energy pulse withstand capability in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Certifications: Pb free, Halogen free
Technical Specifications
| Part No. | Package | Drain-Source Voltage (V) | Gate-Source Voltage (V) | Drain Current @ TC=25C (A) | Drain Current @ TC=100C (A) | Drain Current Pulsed (A) | Power Dissipation (W) | RDS(on) Typ. @ VGS=10V () | Total Gate Charge Typ. (nC) |
| SVF18N50F/FJ | TO-220F-3L / TO-220FJ-3L | 500 | 30 | 18 | 11 | 72.0 | 54 | 0.26 | 38 |
| SVF18N50T | TO-220-3L | 500 | 30 | 18 | 11 | 72.0 | 232 | 0.26 | 38 |
| SVF18N50PN | TO-3P | 500 | 30 | 18 | 11 | 72.0 | 240 | 0.26 | 38 |
2501091111_Hangzhou-Silan-Microelectronics-SVF18N50F_C601617.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
