High density cell dual n channel transistor Guangdong Hottech 2N7002DW low on resistance and compact package
Key Attributes
Model Number:
2N7002DW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-50℃~+150℃
RDS(on):
1.9Ω@10V,0.3A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
2 N-Channel
Input Capacitance(Ciss):
12pF@30V
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
650pC@30V
Mfr. Part #:
2N7002DW
Package:
SOT-363
Product Description
2N7002DW Dual N-Channel Enhancement Mode Field Effect Transistor
The 2N7002DW is a dual N-channel enhancement mode field-effect transistor designed for voltage-controlled small signal switching applications. It features a high-density cell design for low on-resistance (RDS(ON) 1.9 @ VGS=10V, ID=300mA), high saturation current capability, and a rugged, reliable construction. The device is housed in a SOT-363 package, offering a compact solution for space-constrained designs.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Origin: China
- Case Material: Molded Plastic
- Classification Rating: UL 94V-0
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| VGS | Gate-Source Voltage | 12 | V | |||
| (BR)DSS | Drain-Source Breakdown Voltage | 60 | V | |||
| TJ | Maximum Junction Temperature | 150 | C | |||
| TSTG | Storage Temperature Range | -50 | 150 | C | ||
| ID (Pulse) | Pulse Drain Current | Tested TA=25C | 0.8 | A | ||
| ID (Continuous) | Continuous Drain Current | TA=25C | 0.3 | A | ||
| ID (Continuous) | Continuous Drain Current | TA=70C | 0.24 | A | ||
| PD | Maximum Power Dissipation | TA=25C | 0.3 | W | ||
| PD | Maximum Power Dissipation | TA=70C | 0.2 | W | ||
| JA / RJA | Thermal Resistance Junction-Ambient | Mounted on Large Heat Sink | 400 | C/W | ||
| Static Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| (BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 60 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=60V, VGS=0V (TA=25) | 1 | A | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=48V, VGS=0V (TA=125) | 100 | uA | ||
| IGSS | Gate-Body Leakage Current | VGS=12V, VDS=0V | 100 | nA | ||
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID=250A | 1.0 | 1.5 | 2.5 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=0.3A | 1.9 | 3 | ||
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=0.2A | 2.5 | 4 | ||
| Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| Ciss | Input Capacitance | VDS=30V, VGS=0V, f=1MHz | 12 | pF | ||
| Coss | Output Capacitance | 3.2 | pF | |||
| Crss | Reverse Transfer Capacitance | 0.8 | pF | |||
| Qg | Total Gate Charge | VDS=30V, ID=0.3A, VGS=10V | 0.65 | nC | ||
| Qgs | Gate Source Charge | 0.12 | nC | |||
| Qgd | Gate Drain Charge | 0.21 | nC | |||
| Switching Characteristics | ||||||
| td(on) | Turn on Delay Time | VDD=30V, ID=0.3A, RG=3.3, VGS=10V | 4.5 | ns | ||
| tr | Turn on Rise Time | 3.1 | ns | |||
| td(off) | Turn Off Delay Time | 15 | ns | |||
| tf | Turn Off Fall Time | 3.3 | ns | |||
| Source Drain Diode Characteristics | ||||||
| ISD | Source drain current(Body Diode) | TA=25 | 0.2 | A | ||
| VSD | Forward on voltage | TJ=25, ISD=0.2A, VGS=0V | 0.8 | 1.2 | V | |
2410121620_Guangdong-Hottech-2N7002DW_C5190214.pdf
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