40 Volt 240 Amp Power MOSFET Hangzhou Silan Microelectronics SVT042R5NT TO220 Package for Switching
Key Attributes
Model Number:
SVT042R5NT
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
174A
RDS(on):
2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
520pF
Output Capacitance(Coss):
770pF
Pd - Power Dissipation:
250W
Input Capacitance(Ciss):
5.7nF
Gate Charge(Qg):
108nC@10V
Mfr. Part #:
SVT042R5NT
Package:
TO-220
Product Description
Product Overview
The SVT042R5NL5(T) is an N-channel enhancement mode power MOS field-effect transistor manufactured using advanced LVMOS technology. It offers minimized on-state resistance and superior switching performance, making it ideal for UPS and Power Management for Inverter Systems. Key features include high current handling (240A), low voltage (40V), low gate charge, low Crss, fast switching, and improved dv/dt capability.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Certifications: Halogen free (SVT042R5NL5TR), Pb free (SVT042R5NT)
Technical Specifications
| Part Number | Package | Drain-Source Voltage (VDS) | Gate-Source Voltage (VGS) | Drain Current (ID) TC=25C | Drain Current (ID) TC=100C | Power Dissipation (PD) TC=25C | RDS(on) Typ. (m) VGS=10V, ID=50A (PDFN) | RDS(on) Typ. (m) VGS=10V, ID=100A (TO-220) | BVDSS Min. (V) | VGS(th) Typ. (V) | Qg Typ. (nC) |
| SVT042R5NL5TR | PDFN-8-5X6X0.95-1.27 | 40 V | 20 V | 240 A | 150 A | 120 W | 1.8 | - | 40 V | - | 108 |
| SVT042R5NT | TO-220-3L | 40 V | 20 V | 240 A | 150 A | 250 W | - | 2.0 | 40 V | - | 108 |
2501091110_Hangzhou-Silan-Microelectronics-SVT042R5NT_C2897719.pdf
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