Hangzhou Silan Microelectronics SVF4N65F MOSFET designed for operation in AC DC power supply systems
Key Attributes
Model Number:
SVF4N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.3Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.1pF
Number:
1 N-channel
Output Capacitance(Coss):
55pF
Input Capacitance(Ciss):
430pF
Pd - Power Dissipation:
30W
Gate Charge(Qg):
13nC@10V
Mfr. Part #:
SVF4N65F
Package:
TO-220F-3
Product Description
Product Description
The SVF4N65F/M/MJ/D is an N-channel enhancement mode power MOS field effect transistor utilizing Silan proprietary F-CellTM structure VDMOS technology. This advanced design minimizes on-state resistance, enhances switching performance, and provides superior withstand capability for high energy pulses in avalanche and commutation modes. It is widely applied in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: Hangzhou, China
- Hazardous Substance Control: Pb free, Halogen free
Technical Specifications
| Part Number | Package | Drain-Source Voltage (VDS) | Gate-Source Voltage (VGS) | Drain Current (ID) @ TC=25C | Drain Current (ID) @ TC=100C | RDS(on)(typ.) @ VGS=10V | Power Dissipation (PD) @ TC=25C | Ordering Information |
| SVF4N65F | TO-220F-3L | 650V | 30V | 4.0A | 2.5A | 2.3 | 30W | SVF4N65F (Pb free, Tube) |
| SVF4N65MJ | TO-251J-3L | 650V | 30V | 4.0A | 2.5A | 2.3 | 79W | SVF4N65MJ (Halogen free, Tube) |
| SVF4N65M | TO-251D-3L | 650V | 30V | 4.0A | 2.5A | 2.3 | 77W | SVF4N65M (Halogen free, Tube) |
| SVF4N65DTR | TO-252-2L | 650V | 30V | 4.0A | 2.5A | 2.3 | 77W | SVF4N65D (Halogen free, Tape&Reel) |
2501091111_Hangzhou-Silan-Microelectronics-SVF4N65F_C68774.pdf
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