Power switching N channel MOSFET Guangdong Hottech HKTG150N03 with molded plastic PDFN5x6 package and design
Key Attributes
Model Number:
HKTG150N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
2.4V
Reverse Transfer Capacitance (Crss@Vds):
640pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.5nF
Pd - Power Dissipation:
75W
Mfr. Part #:
HKTG150N03
Package:
PDFN5x6
Product Description
Product Overview
The HKTG150N03 is an N-channel MOSFET designed for efficient power switching applications. It features low on-resistance, fast switching speeds, and easily designed drive circuits, making it suitable for paralleling and various electronic designs. This MOSFET is housed in a PDFN5x6 package.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Marking: G150N03
- Case: PDFN5x6
- Case Material: Molded Plastic
- UL flammability Classification Rating: 94V-0
- Weight: 0.016 grams (approximate)
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Drain-source voltage | VDS | 30 | V | |||
| Gate-source voltage | VGS | 20 | V | |||
| Continuous drain current | ID | 150 | A | |||
| Power dissipation | PD | 75 | W | |||
| Thermal resistance Junction to ambient | RJA | 20 | C/W | |||
| Junction and Storage temperature | TJ,TSTG | -55 | +150 | C | ||
| Drain-Source breakdown voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250uA | ||
| Zero gate voltage drain current | IDSS | 1 | A | VDS=30V, VGS=0V | ||
| Gate-body leakage current | IGSS | 100 | nA | VDS=0V, VGS=20V | ||
| Gate-threshold voltage | VGS(th) | 1.1 | 2.4 | V | VDS=20V,ID=250A (note 1) | |
| Drain-source on-resistance | RDS(ON) | 3 | m | VGS=10V, ID=30A (note 1) | ||
| Drain-source on-resistance | RDS(ON) | 6 | m | VGS=4.5V, ID=20A (note 1) | ||
| Input capacitance | Ciss | 4500 | pF | VDS=15V, VGS=0V, f=1MHz | ||
| Output capacitance | Coss | 800 | pF | VDS=15V, VGS=0V, f=1MHz | ||
| Reverse transfer capacitance | Crss | 640 | pF | VDS=15V, VGS=0V, f=1MHz | ||
| Turn-on delay time | td(on) | 11 | nS | VDD=20V,VGS=10V,ID =4A,Rg=3, RL=0.75 | ||
| Turn-on rise time | tr | 80 | nS | VDD=20V,VGS=10V,ID =4A,Rg=3, RL=0.75 | ||
| Turn-off delay time | td(off) | 39 | nS | VDD=20V,VGS=10V,ID =4A,Rg=3, RL=0.75 | ||
| Turn-off fall time | tf | 92 | nS | VDD=20V,VGS=10V,ID =4A,Rg=3, RL=0.75 |
2411220331_Guangdong-Hottech-HKTG150N03_C5364298.pdf
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