Synchronous buck converter mosfet with super low gate charge and trench technology HUASHUO HSU6040
Key Attributes
Model Number:
HSU6040
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
112A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.2mΩ@10V,18A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
104W
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
HSU6040
Package:
TO-252-2
Product Description
Product Overview
The HSU6040 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge, making it suitable for most synchronous buck converter applications. This MOSFET meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Key advantages include super low gate charge, excellent CdV/dt effect decline, and advanced high cell density Trench technology.
Product Attributes
- Brand: HS-Semi
- Certifications: RoHS, Green Device Available
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Model | Type | Voltage (VDS) | Continuous Drain Current (ID@TC=25) | Continuous Drain Current (ID@TC=100) | Pulsed Drain Current (IDM) | Single Pulse Avalanche Energy (EAS) | Avalanche Current (IAS) | Total Power Dissipation (PD@TC=25) | Storage Temperature Range (TSTG) | Operating Junction Temperature Range (TJ) | Thermal Resistance Junction-Ambient (RJA) | Thermal Resistance Junction-Case (RJC) | Static Drain-Source On-Resistance (RDS(ON),max @ VGS=10V, ID=18A) | Gate Threshold Voltage (VGS(th)) | Drain-Source Leakage Current (IDSS @ VDS=48V, VGS=0V, TJ=25) | Gate-Source Leakage Current (IGSS @ VGS=20V, VDS=0V) | Forward Transconductance (gfs @ VDS=10V, ID=30A) | Gate Resistance (Rg @ VDS=0V, VGS=0V, f=1MHz) | Total Gate Charge (Qg @ VDS=48V, VGS=10V, ID=18A) | Gate-Source Charge (Qgs) | Gate-Drain Charge (Qgd) | Turn-On Delay Time (Td(on) @ VDD=30V, VGS=10V, RG=3.3, ID=18A) | Rise Time (Tr) | Turn-Off Delay Time (Td(off)) | Fall Time (Tf) | Input Capacitance (Ciss @ VDS=15V, VGS=0V, f=1MHz) | Output Capacitance (Coss) | Reverse Transfer Capacitance (Crss) | Continuous Source Current (IS) | Pulsed Source Current (ISM) | Diode Forward Voltage (VSD @ IS=1A, TJ=25) | Reverse Recovery Time (trr @ IF=18A, di/dt=100A/s, TJ=25) | Reverse Recovery Charge (Qrr) | Package | Packaging | Order Quantity |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HSU6040 | N-Ch MOSFET | 60 | 112 A | 72 A | 250 A | 125 mJ | 50 A | 104 W | -55 to 150 | -55 to 150 | 62 /W | 1.2 /W | 5.2 m | 1.2 - 2.5 V | 1 uA | 100 nA | 75 S | 0.7 | 75 nC | 15.5 nC | 20.3 nC | 18.5 ns | 8.8 ns | 58.8 ns | 15.8 ns | 4706 pF | 325 pF | 245 pF | 116 A | 250 A | 1.2 V | 22.9 ns | 11.6 nC | TO252-2 | 2500/Tape&Reel | 2500 |
Note: Electrical characteristics are tested at TJ=25 unless otherwise noted.
2410121455_HUASHUO-HSU6040_C508793.pdf
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