Low On Resistance N Channel MOSFET Guangdong Hottech IRLML0060 With 60V Drain Source Voltage Rating
Key Attributes
Model Number:
IRLML0060
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2.7A
RDS(on):
80mΩ@10V,2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Output Capacitance(Coss):
37pF
Pd - Power Dissipation:
-
Input Capacitance(Ciss):
290pF
Gate Charge(Qg):
2.5nC@4.5V
Mfr. Part #:
IRLML0060
Package:
SOT-23
Product Description
Product Overview
The IRLML0060 is an N-channel MOSFET designed for surface mount applications. It features a drain-source voltage of 60V, a continuous drain current of 2.7A, and ultra-low on-resistance (<92m@VGS=10V). Its fast switching capability and low on-resistance make it suitable for various electronic applications.
Product Attributes
- Brand: GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
- Product Name: IRLML0060
- Device Type: MOSFET (N-CHANNEL)
- Package: SOT-23
- Case Material: Molded Plastic
- Flammability Rating: UL 94V-0
- Weight: 0.008 grams (approximate)
- Email: hkt@heketai.com
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Drain-source voltage | VDS | 60 | V | |
| Gate-source voltage | VGS | ±16 | V | |
| Continuous drain current (TA=25°C) | ID | 2.7 | A | TA=25°C |
| Continuous drain current (TA=70°C) | ID | 2.1 | A | TA=70°C |
| Pulsed drain current | IDM | 11 | A | (Note 1) |
| Power dissipation (TA=25°C) | PD | 1.25 | W | TA=25°C |
| Power dissipation (TA=70°C) | PD | 0.8 | W | TA=70°C |
| Linear Derating Factor | 0.01 | W/°C | ||
| Thermal resistance from Junction to ambient | RθJA* | 100 | °C/W | *Surface mounted on 1 in square Cu board |
| Storage and Junction temperature | TJ,TSTG | -55 ~+150 | °C | |
| Drain-Source breakdown voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250μA |
| Zero gate voltage drain current | IDSS | 20 | μA | VDS=60V, VGS=0V |
| Zero gate voltage drain current (Tj=125°C) | IDSS | 250 | μA | VDS=60V, VGS=0V,Tj=125°C |
| Gate-body leakage current | IGSS | ±100 | nA | VDS=0V, VGS=±16V |
| Gate-threshold voltage | VGS(th) | 0.8 ~ 1.8 | V | VDS=VGS, ID=250μA (note 1) |
| Drain-source on-resistance (VGS=4.5V) | RDS(ON) | 78 ~ 92 | mΩ | VGS=4.5V, ID=2.2A (note 1) |
| Drain-source on-resistance (VGS=10V) | RDS(ON) | 98 ~ 116 | mΩ | VGS=10V, ID=2.7A (note 1) |
| Internal Gate Resistance | RG | 1.6 | Ω | |
| Forward transconductance | gFS | 7.6 | S | VDS=15V, ID=2.0A (note 1) |
| Input capacitance | Ciss | 290 | pF | VDS=25V, VGS=0V, f=1MHz |
| Output capacitance | Coss | 37 | pF | VDS=25V, VGS=0V, f=1MHz |
| Reverse transfer capacitance | Crss | 21 | pF | VDS=25V, VGS=0V, f=1MHz |
| Turn-on delay time | td(on) | 5.4 | nS | VDD=30V,ID=1A, RG=6.8Ω,VGS=4.5V |
| Turn-on rise time | tr | 6.3 | nS | VDD=30V,ID=1A, RG=6.8Ω,VGS=4.5V |
| Turn-off delay time | td(off) | 6.8 | nS | VDD=30V,ID=1A, RG=6.8Ω,VGS=4.5V |
| Turn-off fall time | tf | 4.2 | nS | VDD=30V,ID=1A, RG=6.8Ω,VGS=4.5V |
| Total gate charge | Qg | 2.5 | nC | VDS=30V,VGS=4.5V,ID=2.7A |
| Gate-source charge | Qgs | 0.7 | nC | VDS=30V,VGS=4.5V,ID=2.7A |
| Gate-drain charge | Qgd | 1.3 | nC | VDS=30V,VGS=4.5V,ID=2.7A |
| Diode forward current (Body Diode) | IS | 1.6 | A | |
| Pulsed Source Current (Body Diode) | ISM | 11 | A | |
| Diode forward voltage (Body Diode) | VSD | 1.3 | V | IS=2.7A, VGS=0V,Tj=25°C (note 1) |
| Reverse Recovery Time | trr | 14 ~ 21 | nS | TJ=25°C,VR=30V,IF=1.6A, di/dt=100A/μs |
| Reverse Recovery Charge | Qrr | 13 ~ 20 | nC | TJ=25°C,VR=30V,IF=1.6A, di/dt=100A/μs |
2410122008_Guangdong-Hottech-IRLML0060_C5364306.pdf
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