High Current Handling N Channel MOSFET Guangdong Hottech HKTD80N03 with 170 Amp Pulsed Drain Current

Key Attributes
Model Number: HKTD80N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
RDS(on):
6mΩ@10V,30A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
230pF@20V
Number:
1 N-channel
Input Capacitance(Ciss):
2.33nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
-
Mfr. Part #:
HKTD80N03
Package:
TO-252
Product Description

Product Overview

The HKTD80N03 is a N-CHANNEL Power MOSFET designed for high-performance applications. It features a high-density cell design for ultra-low on-resistance and is fully characterized for avalanche voltage and current. This MOSFET is suitable for various power management tasks requiring efficient switching and low conduction losses.

Product Attributes

  • Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
  • Model: HKTD80N03
  • Origin: China
  • Material: Molded Plastic (Case)
  • Certifications: UL flammability 94V-0
  • Email: hkt@heketai.com

Technical Specifications

ParameterSymbolMinTypMaxUnitConditions
Maximum RatingsVDS30V
VGS20V
ID80A
IDM170ANote 1
PD2.5W
RJC6C/W
Electrical Characteristics (Off)V(BR)DS30VVGS=0V,ID=250A
IDSS1uAVDS=30V, VGS=0V
IGSS100nAVDS=0V, VGS=20V
Electrical Characteristics (On)VGS(th)1.01.52.5VVDS=VGS, ID=250A
RDS(ON)4.86mVGS=10V, ID=30A
Dynamic CharacteristicsCiss2330pFVGS=0V VDS=20V f=1.0MHz
Coss460pF
Crss230pF
Switching Characteristicstd(on)55nsVDD=20V ID=20A RG=3
tr36ns
td(off)37ns
tf14ns
Gate ChargeQg51nCVGS=10V
Qgs14nC
Qgd11nC
Diode CharacteristicsVSD1.2VIS=24A,VGS=0V
ISM170APulsed

2410121717_Guangdong-Hottech-HKTD80N03_C5364294.pdf

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