Power MOSFET Hangzhou Silan Microelectronics SVF4N60CAMJ for DC DC converters and motor control
Key Attributes
Model Number:
SVF4N60CAMJ
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.5pF
Number:
1 N-channel
Output Capacitance(Coss):
55pF
Input Capacitance(Ciss):
433pF
Pd - Power Dissipation:
86W
Gate Charge(Qg):
26nC@10V
Mfr. Part #:
SVF4N60CAMJ
Package:
TO-251
Product Description
Product Overview
The SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor manufactured using Silan's proprietary F-CellTM high-voltage planar VDMOS technology. This technology enhances on-state resistance, switching performance, and high energy pulse withstand capability in avalanche and commutation modes. It is widely used in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: Silan Microelectronics
- Origin: HANGZHOU SILAN MICROELECTRONICS CO.,LTD
- Hazardous Substance Control: Halogen free, Pb free
Technical Specifications
| Part Number | Package | Marking | Drain-Source Voltage (VDS) | Gate-Source Voltage (VGS) | Drain Current (ID @ TC=25C) | Drain Current (ID @ TC=100C) | Drain Current Pulsed (IDM) | Power Dissipation (PD @ TC=25C) | Single Pulsed Avalanche Energy (EAS) | Thermal Resistance (RJC) | Thermal Resistance (RJA) | Drain-Source Breakdown Voltage (BVDSS) | Gate-Source Leakage Current (IGSS) | Gate Threshold Voltage (VGS(th)) | Static Drain-Source On State Resistance (RDS(on)) | Input Capacitance (Ciss) | Output Capacitance (Coss) | Reverse Transfer Capacitance (Crss) | Turn-on Delay Time (td(on)) | Turn-on Rise Time (tr) | Turn-off Delay Time (td(off)) | Turn-off Fall Time (tf) | Total Gate Charge (Qg) | Gate-Source Charge (Qgs) | Gate-Drain Charge (Qg) | Continuous Source Current (IS) | Pulsed Source Current (ISM) | Diode Forward Voltage (VSD) | Reverse Recovery Time (Trr) | Reverse Recovery Charge (Qrr) |
| SVF4N60CAF | TO-220F-3L | SVF4N60CAF | 600V | 30V | 4.0A | 2.5A | 16A | 33W | 217mJ | 3.85C/W | 62.5C/W | 600V | 100nA | 2.0~4.0V | 2.0 (typ. @ VGS=10V, ID=2.0A) | 433pF | 55pF | 4.5pF | 10ns | 26ns | 29ns | 26ns | 13nC | 2.8nC | 6.2nC | 4.0A | 16A | 1.4V | 420ns | 1.8C |
| SVF4N60CAK | TO-262-3L | SVF4N60CAK | 600V | 30V | 4.0A | 2.5A | 16A | 92W | 217mJ | 1.36C/W | 62.5C/W | 600V | 100nA | 2.0~4.0V | 2.0 (typ. @ VGS=10V, ID=2.0A) | 433pF | 55pF | 4.5pF | 10ns | 26ns | 29ns | 26ns | 13nC | 2.8nC | 6.2nC | 4.0A | 16A | 1.4V | 420ns | 1.8C |
| SVF4N60CAT | TO-220-3L | SVF4N60CAT | 600V | 30V | 4.0A | 2.5A | 16A | 77W | 217mJ | 1.61C/W | 62.0C/W | 600V | 100nA | 2.0~4.0V | 2.0 (typ. @ VGS=10V, ID=2.0A) | 433pF | 55pF | 4.5pF | 10ns | 26ns | 29ns | 26ns | 13nC | 2.8nC | 6.2nC | 4.0A | 16A | 1.4V | 420ns | 1.8C |
| SVF4N60CADTR | TO-252-2L | 4N60CAD | 600V | 30V | 4.0A | 2.5A | 16A | 86W | 217mJ | 1.45C/W | 62.0C/W | 600V | 100nA | 2.0~4.0V | 2.0 (typ. @ VGS=10V, ID=2.0A) | 433pF | 55pF | 4.5pF | 10ns | 26ns | 29ns | 26ns | 13nC | 2.8nC | 6.2nC | 4.0A | 16A | 1.4V | 420ns | 1.8C |
| SVF4N60CAMN | TO-251N-3L | 4N60CAMN | 600V | 30V | 4.0A | 2.5A | 16A | 110W | 217mJ | 1.14C/W | 62.5C/W | 600V | 100nA | 2.0~4.0V | 2.0 (typ. @ VGS=10V, ID=2.0A) | 433pF | 55pF | 4.5pF | 10ns | 26ns | 29ns | 26ns | 13nC | 2.8nC | 6.2nC | 4.0A | 16A | 1.4V | 420ns | 1.8C |
| SVF4N60CAMJ | TO-251J-3L | 4N60CAMJ | 600V | 30V | 4.0A | 2.5A | 16A | 110W | 217mJ | 1.14C/W | 62.5C/W | 600V | 100nA | 2.0~4.0V | 2.0 (typ. @ VGS=10V, ID=2.0A) | 433pF | 55pF | 4.5pF | 10ns | 26ns | 29ns | 26ns | 13nC | 2.8nC | 6.2nC | 4.0A | 16A | 1.4V | 420ns | 1.8C |
2501091111_Hangzhou-Silan-Microelectronics-SVF4N60CAMJ_C414164.pdf
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