Low Voltage N Channel MOSFET Guangdong Hottech HKTQ60N02 for Power Conversion Applications
Key Attributes
Model Number:
HKTQ60N02
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
50A
RDS(on):
4.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
750mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
320pF
Number:
1 N-channel
Output Capacitance(Coss):
500pF
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
4.3nF
Gate Charge(Qg):
77nC@10V
Mfr. Part #:
HKTQ60N02
Package:
PDFN3333
Product Description
HKTQ60N02 LOW VOLTAGE MOSFET (N-CHANNEL)
The HKTQ60N02 is a low voltage N-channel MOSFET designed for high-efficiency power conversion. It features ultra-low on-resistance and is ideal for low power DC to DC converters and load switch applications.
Product Attributes
- Case: PDFN3333
- Case Material: Molded Plastic
- UL Flammability Classification Rating: 94V-0
- Weight: 0.012 grams (approximate)
- Marking: Q60N02
- Manufacturer: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Units |
| VDS | Drain-Source Voltage | 20 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID | Continuous Drain Current | TC=25 | 50 | A | ||
| TC=100 | 39 | A | ||||
| IDM | Pulsed Drain Current | 200 | A | |||
| EAS | Single Pulse Avalanche Energy | 80 | mJ | |||
| IAS | Avalanche Current | 40 | A | |||
| PD | Total Power Dissipation | TC=25 | 83 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 20 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=10A | 4.5 | 5.8 | mΩ | |
| VGS=2.5V , ID= 8 A | 6 | 7.5 | mΩ | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 0.5 | 0.75 | 1.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=12V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=12V , VGS=0V , TJ=125 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.2 | --- | Ω |
| Qg | Total Gate Charge | VDS=20V , VGS=10V , ID=10A | --- | 77 | --- | nC |
| Qgs | Gate-Source Charge | --- | 8.7 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 14 | --- | nC | |
| Td(on) | Turn-On Delay Time | VDD=20V , VGS=10V , RG=3Ω, ID=10A | --- | 10 | --- | ns |
| Tr | Rise Time | --- | 12 | --- | ns | |
| Td(off) | Turn-Off Delay Time | --- | 56 | --- | ns | |
| Tf | Fall Time | --- | 16 | --- | ns | |
| Ciss | Input Capacitance | VDS=20V , VGS=0V , f=1MHz | --- | 4300 | --- | pF |
| Coss | Output Capacitance | --- | 500 | --- | pF | |
| Crss | Reverse Transfer Capacitance | --- | 320 | --- | pF |
2409292003_Guangdong-Hottech-HKTQ60N02_C5364301.pdf
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