Trenched N channel MOSFET HUASHUO HSBA4018 engineered for operation in high current power conversion
Key Attributes
Model Number:
HSBA4018
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
120A
RDS(on):
3.8mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
344pF
Number:
1 N-channel
Output Capacitance(Coss):
410pF
Input Capacitance(Ciss):
6.15nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
110nC@10V
Mfr. Part #:
HSBA4018
Package:
PRPAK5x6-8L
Product Description
Product Overview
The HSBA4018 is a high cell density trenched N-channel MOSFET designed for fast switching applications, particularly in synchronous buck converters. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This device is 100% EAS guaranteed and approved for full function reliability, making it suitable for demanding power conversion scenarios.
Product Attributes
- Brand: HS-Semi
- Product Type: N-Ch MOSFETs
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Device Available
- Guarantees: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V1 | 120 | A | |||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V1 | 75 | A | |||
| IDM | Pulsed Drain Current2 | 480 | A | |||
| EAS | Single Pulse Avalanche Energy3 | 440 | mJ | |||
| PD@TC=25 | Total Power Dissipation4 | 75 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Thermal Data | ||||||
| RJA | Thermal Resistance Junction-Ambient | --- | 55 | /W | ||
| RJC | Thermal Resistance Junction-Case1 | --- | 1.7 | /W | ||
| Electrical Characteristics (TJ=25 , unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25, ID=1mA | 0.034 | --- | V/ | |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=20A | 2.3 | 3.0 | m | |
| VGS=4.5V , ID=20A | 3.0 | 3.8 | m | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| VGS(th)/TJ | VGS(th) Temperature Coefficient | -5.84 | --- | mV/ | ||
| IDSS | Drain-Source Leakage Current | VDS=40V , VGS=0V , TJ=25 | --- | 1 | uA | |
| VDS=40V , VGS=0V , TJ=125 | --- | 100 | uA | |||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | 100 | nA | |
| gfs | Forward Transconductance | VDS=5V , ID=15A | 39 | --- | S | |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.0 | --- | ||
| Qg | Total Gate Charge | VDS=20V , VGS=10V , ID=20A | 110 | --- | nC | |
| Qgs | Gate-Source Charge | 19 | --- | |||
| Qgd | Gate-Drain Charge | 18 | --- | |||
| td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3, ID=1A | 12 | --- | ns | |
| tr | Rise Time | 24 | --- | ns | ||
| td(off) | Turn-Off Delay Time | 79 | --- | ns | ||
| tf | Fall Time | 21 | --- | ns | ||
| Ciss | Input Capacitance | VDS=20V , VGS=0V , f=1MHz | 6150 | --- | pF | |
| Coss | Output Capacitance | 410 | --- | pF | ||
| Crss | Reverse Transfer Capacitance | 344 | --- | pF | ||
| Diode Characteristics | ||||||
| IS | Continuous Source Current1,5 | VG=VD=0V , Force Current | --- | 120 | A | |
| ISM | Pulsed Source Current2,5 | --- | 480 | A | ||
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25 | --- | 1 | V | |
| trr | Reverse Recovery Time | IF=20A , di/dt=100A/s , TJ=25 | 26 | --- | nS | |
| Qrr | Reverse Recovery Charge | 17 | --- | nC | ||
| Package Outline Dimensions | ||||||
| PRPAK5X6 | ||||||
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width 300us, duty cycle 2%.
3. The EAS data shows Max. rating. The test condition is VDD=40V, VGS=10V, L=0.5mH.
4. The power dissipation is limited by 150 junction temperature.
5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2411061707_HUASHUO-HSBA4018_C42376802.pdf
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