dual N channel MOSFET HUASHUO HSM1564 with 60V drain source voltage and excellent switching speed
Key Attributes
Model Number:
HSM1564
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
17mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
123pF
Number:
2 N-Channel
Output Capacitance(Coss):
180pF
Input Capacitance(Ciss):
2.6nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
53nC@10V
Mfr. Part #:
HSM1564
Package:
SOP-8
Product Description
Product Overview
The HSM1564 is a dual N-channel MOSFET featuring high cell density trench technology, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. Designed for fast switching, these 60V MOSFETs meet RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved. Key benefits include super low gate charge and excellent Cdv/dt effect decline.
Product Attributes
- Brand: HS-Semi
- Green Device Available
- 100% EAS Guaranteed
- RoHS Compliant
Technical Specifications
| Model | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| HSM1564 | Drain-Source Voltage (VDS) | 60 | V | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Continuous Drain Current (ID@TA=25) | VGS @ 10V1 | 8 | A | |||
| Continuous Drain Current (ID@TA=70) | VGS @ 10V1 | 6 | A | |||
| Pulsed Drain Current (IDM)2 | 32 | A | ||||
| Single Pulse Avalanche Energy (EAS)3 | 150 | mJ | ||||
| Total Power Dissipation (PD@TA=25)4 | 2 | W | ||||
| Storage Temperature Range (TSTG) | -55 | 150 | ||||
| Operating Junction Temperature Range (TJ) | -55 | 150 | ||||
| Thermal Resistance Junction-Ambient (RJA) | --- | 75 | /W | |||
| Thermal Resistance Junction-Case (RJC)1 | --- | 24 | /W | |||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 60 | --- | --- | V | |
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=10V , ID=8A | --- | 13.5 | 17 | m | |
| Static Drain-Source On-Resistance (RDS(ON))2 | VGS=4.5V , ID=6A | --- | 15.5 | 20 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 2 | 3 | V | |
| Total Gate Charge (Qg) (4.5V) | VDS=30V , VGS=10V , ID=6A | --- | 53 | --- | nC |
Ordering Information
| Part Number | Package Code | Packaging |
|---|---|---|
| HSM1564 | SOP-8 | 4000/Tape&Reel |
2410121653_HUASHUO-HSM1564_C2828489.pdf
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